Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate

Reichel, Carsten; Kronholz, Stephan; Kammler, Thorsten; Zeun, Annekathrin; Beernink, Gunda

doi:10.1016/j.sse.2011.01.018

Cited by 4 publications

(2 citation statements)

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“…refer also to Ref. [11]). After processing a 70nm epitaxial Silicon-Germanium layer (Ge=26±1%) with 4.5 (±0.5) ×10 19 cm -3 Boron co-doping is obtained.…”

Section: Methodsmentioning

confidence: 89%

Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of In Situ Boron-Doped Si0.75Ge0.25 Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant

Wirbeleit

2010

DDF

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Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematical convolution of the diffusion model slope and the initial boron concentration profile, these former results were transferred to this work. In this way, non-diffusing boron was predicted to exist in the center of the presented in situ boron-doped films. In addition, boron diffusion control by co-implanted carbon was demonstrated and the applied LDD model was completed and confirmed by adapting A. Einstein’s proof [4] for this purpose.

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