Local Density Diffusivity (LDD-) Model for Boron Out-Diffusion of <i>In Situ</i> Boron-Doped Si<sub>0.75</sub>Ge<sub>0.25</sub> Epitaxial Films Post Advanced Rapid Thermal Anneals with Carbon Co-Implant
Abstract:Boron in silicon has presented challenges for decades because of clustering and so-called transient enhanced diffusion [1-2]. An understanding of boron diffusion post rapid thermal annealing in general, and out of in situ doped epitaxially grown silicon-germanium films in particular, is essential to hetero junction engineering in microelectronic device technology today. In order to model boron diffusion, post-implantation, the local density diffusion (LDD) model has been applied in the past [3]. Via mathematic… Show more
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