Control of simultaneous effects of the temperature, indium composition and the impact ionization process on the performance of the InN/InxGa1-

Abstract

The impact ionization in semiconductor materials is a process that produces multiple charge carrier pairs from a single excitation. This mechanism constitutes a possible road to increase the efficiency of the p-n and p-i-n solar cells junctions. Our study considers the structure of InN/InGaN quantum dot solar cell in the calculation. In this work, we study the effect of indium concentration and temperature on the coefficient  of the material type parameter of the impact ionization process for a p(InGaN)n(InGaN) and p(InGaN)-i(QDs-InN)-n(InGaN) solar cell. Next, we investigate the effect of perturbation such as temperature and indium composition on conventional solar cell's (p(InGaN)-n(InGaN)) and solar cells of the third generation with quantum dot intermediate band IBSC (p(InGaN-i(QD-InN)-n(InGaN)) by analyzing their behaviour in terms of efficiency of energy conversion at the presence of the impact ionization process. Our numerical results show that the efficiency is strongly influenced by all of these parameters. It is also demonstrated that  decreased with the increase of indium concentration and temperature which contributes to an overall improvement of the conversion efficiency.

Temperature and hydrostatic pressure effects on the electronic structure, optical properties of spherical segment quantum dot/wetting layer and group velocity of light

“…Nanostructures like quantum wells, wires and dots have been one of the important subjects for research groups in recent years. Quantum dots (QDs) with three-dimensional confinement of carriers have interesting applications such as QD lasers [1,2], QD solar cells [3,4], QD photodetectors [5,6] and biomedical applications [7]. Researchers have investigated the electronic structure and optical properties of QD systems.…”