Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Chouchen, Bilel; Aouami, A. El; Gazzah, Mohamed Hichem; Bajahzar, Abdullah; Feddi, E.; Dujardin, F.; Belmabrouk, Hafedh

doi:10.1016/j.ijleo.2019.163385

“…Based on the above transformation of rate equations in each layer, the carrier transport and photon generation process in LED are equivalent to the current functions of the electrical and optical loops, respectively described by Eq. ( 33) and (34).…”

Section: Output Of the Equivalent Circuitmentioning

confidence: 99%

A Joint Illumination and Communication GaN MQW LED Model for Visible Light Communication System

Shi¹,

Zhang²,

Liu³

et al. 2023

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0

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This paper presents a joint illumination and communication model for Gallium Nitride (GaN) Multiple Quantum Well (MQW) Light Emitting Diodes (LEDs) used in Visible Light Communication (VLC) systems. Based on device physics, the proposed model characterizes the intrinsic nonlinearity of the LED's electro-optic conversion by incorporating the LED's material, physical structure, and bias voltage. The modeling methodology and the model's accuracy are demonstrated through experimental measurements on a commercial sample LED by a VLC system performance testbed. The validation results indicate the proposed GaN MQW LED model is consistent with physical principles and accurately predicts the LED's nonlinear impact on the VLC system under varying signal frequency and illumination intensity of the LED, underscoring its significance for analyzing and optimizing VLC systems. Overall, the proposed model offers a valuable tool for the design and optimization of VLC systems using GaN-based LEDs.

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“…A self-consistent approach, based on the Schrödinger equation and the Poisson equation, is employed to derive the electron concentration in the quantum well [34]. The derivation is detailed in Appendix I, and the simplified electron concentration in the quantum well is given as Eq.…”

Section: Carriers Concentrationmentioning

confidence: 99%

A Joint Illumination and Communication GaN MQW LED Model for Visible Light Communication System

Shi¹,

Zhang²,

Liu³

et al. 2023

Preprint

0

View full text Add to dashboard Cite

This paper presents a joint illumination and communication model for Gallium Nitride (GaN) Multiple Quantum Well (MQW) Light Emitting Diodes (LEDs) used in Visible Light Communication (VLC) systems. Based on device physics, the proposed model characterizes the intrinsic nonlinearity of the LED's electro-optic conversion by incorporating the LED's material, physical structure, and bias voltage. The modeling methodology and the model's accuracy are demonstrated through experimental measurements on a commercial sample LED by a VLC system performance testbed. The validation results indicate the proposed GaN MQW LED model is consistent with physical principles and accurately predicts the LED's nonlinear impact on the VLC system under varying signal frequency and illumination intensity of the LED, underscoring its significance for analyzing and optimizing VLC systems. Overall, the proposed model offers a valuable tool for the design and optimization of VLC systems using GaN-based LEDs.

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“…Undoped and Ni doped zinc oxide thin films deposited by sol-gel spin coating method onto glass substrates. In this work, calculations were all performed under ideal conditions (under 1-sun AM1.5 illumination and a temperature of 300 K using the one diode ideal model), and for convenience, several simplifying assumptions were made, including no reflection losses, no series resistance losses, and contact shadowing [8,18,19].…”

Section: Properties Of Igan Used In the Simulationmentioning

confidence: 99%

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

Abed¹,

Naim²,

Djelloul³

et al. 2022

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The present work aims to improve the power and the conversion efficiency of solar cells, using the PC1D simulator, to study the performances of the solar cells based on (InGaN). The paper focuses first on optimization of the technological and geometrical parameters such as doping and the thickness of the layers to investigate their influence on the conversion efficiency of these structures. Then, the paper evaluates the efficiency η for the solar cell with and without Anti-reflection coating ARC on textured surfaces to achieve a final increase of 22.5% of conversion efficiency compared to InGaN standard solar cells.

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Modeling the impact of temperature effect and polarization phenomenon on InGaN/GaN-Multi-quantum well solar cells

Cited by 11 publications

References 26 publications

A Joint Illumination and Communication GaN MQW LED Model for Visible Light Communication System

A Joint Illumination and Communication GaN MQW LED Model for Visible Light Communication System

A Joint Illumination and Communication GaN MQW LED Model for Visible Light Communication System

Enhancing the efficiency of the gallium indium nitride (InGaN) solar cell by optimizing the effective parameters

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