Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis

Phulpin, Tanguy; Isoird, Karine; Trémouilles, David; Austin, Patrick; Perpinyà, Xavier; León, Javier; Vellvehı́, M.

doi:10.1109/tdmr.2018.2817255

Cited by 8 publications

(5 citation statements)

References 7 publications

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“…Another method to study SiC-defects consists in using Focus ion Beam (FIB) [7]. In a previous study [3], short circuits were submitted to high temperatures until failure. Thanks to FIB analysis, the authors identified failure origin as gate metallization failure.…”

Section: Fib-edx Resultsmentioning

confidence: 99%

“…In one of our previous study, the FIB analysis on MESFET device also clearly revealed the presence of a hole (Fig.10). This defect undoubtedly appeared after the activation of a parasitic transistor, causing SiC sublimation, during ESD [3].…”

Section: Fib-edx Resultsmentioning

confidence: 99%

“…MESFETs characteristics were ranging from 0 to 15V with respectively 0 to 20 mA. They can also operate in static mode until 150V [3]. During electrostatic discharges (ESD) with Human Body Model (HBM) test, failure was observed at voltages from about 50V.…”

Section: Diodes and Mesfet Sicmentioning

confidence: 99%

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SiC tools for reliability study

Phulpin

Jaffré

Alvarez

et al. 2019

2019 International Semiconductor Conference (CAS)

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Understanding the failure mechanisms is essential to ensure reliability for a new technology of semiconductors. Amongst various existing tools dedicated to silicon-based devices, there is no consensual method for silicon carbide (SiC) devices. This semiconductor offers very interesting properties for power electronics in comparison with Si, but these failures are different and need to be studied. This paper will compare different methods applied to failures, focusing on lock-in thermography and micro-Raman analysis. Three devices have been evaluated, a vertical diode, a lateral diode and a MESFET.

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Section: Fib-edx Resultsmentioning

confidence: 99%

Section: Fib-edx Resultsmentioning

confidence: 99%

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SiC tools for reliability study

Phulpin

Jaffré

Alvarez

et al. 2019

2019 International Semiconductor Conference (CAS)

Self Cite

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“…Consequently, this may lead to thermal runaway and cause critical damage to the electronic devices. The failure mechanism of 4H-SiC devices was analyzed based on the recent ESD standards, and research was conducted on the junction of 4H-SiC power devices and ESD sensitivity of the oxide [12], [13]. However, few studies have been reported that implement the existing protection devices using SiC materials to incorporate the high robustness, low resistance, and excellent high-temperature characteristics of 4H-SiC materials into ESD protection devices.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

Jin

Lee

et al. 2021

IEEE J. Electron Devices Soc.

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4H-SiC is a wide-bandgap material that exhibits excellent high-temperature conductivity and high operating voltage. These characteristics can provide high electrostatic discharge (ESD) robustness in high voltage applications. However, a considerably wide range of snapback phenomena is triggered for 4H-SiC-based ESD protection devices owing to a high critical electric field. In this study, an ESD protection device based on a lateral insulated-gate bipolar transistor (LIGBT) with a new structure that creates an internal silicon-controlled rectifier (SCR) path is proposed. The proposed ESD protection device minimizes the effective base region of the NPN parasitic bipolar transistor to the gate length based on the internal SCR operation of the LIGBT. It also adjusts the emitter injection efficiency of the PNP parasitic bipolar transistor by introducing a segment topology and inserting an additional implant area. Consequently, the proposed ESD protection device significantly improves the wide range of snapback phenomena occurring in the 4H-SiC materials. A conventional SCR, the LIGBT, and the proposed protection device were fabricated using the 4H-SiC process under the same condition, and their electrical characteristics were comparatively analyzed using a transmission-line pulse system. Moreover, its high-temperature reliability was evaluated at 300-500 K to examine the compatibility with 4H-SiC devices and circuits that require a relatively high-temperature operation.INDEX TERMS Electrostatic discharge, holding voltage, snapback, silicon-controlled rectifier, lateral insulated-gate bipolar transistor.

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“…In recent years, the main research point of 4H-SiC MESFET microwave power devices is to improve the DC and RF characteristics and has made great progress [5][6][7][8]. Many researchers have proposed many new structures.…”

Section: Introductionmentioning

confidence: 99%

New 4H-SiC Metal Semiconductor Field Effect Transistors with Double Symmetric Step Buried Oxide Layer for High Energy Efficiency Applications

Zhu¹,

Jia²,

Dong³

et al. 2021

Preprint

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A novel 4H-SiC metal semiconductor field effect transistor (MESFET) device with double symmetric step buried oxide layer is proposed and the mechanism is studied through TCAD simulation. The step buried oxide layer is mainly to reduce the current leakage to the substrate and improve drain current. At the same time, the presence of the oxide layer changes the electric field distribution, reduces the electric field concentration phenomenon, and the breakdown voltage is improved. Due to the presence of the step buried oxide layer, the charge distribution of the device is changed, and the frequency characteristics are improved. When the step buried oxide channel is under the optimized parameter condition, compared with the traditional double-recessed structure 4H-SiC MESFET (DR 4H-SiC MESFET), the direct current (DC) characteristics of the new structure are improved, and the breakdown voltage is increased by 14% to reach 183 V. In radio frequency (RF) characteristics, cut-off frequency is 24.4 GHz, an increase of 11.9 %; maximum operating frequency is 63.9 GHz, an increase of 20.3%; the maximum power added efficiency (PAE) in the L-band and S-band reaches 63.5 %, PAE is 23.7 % higher than the DR structure. At the end of this paper, the new structure is verified for high-energy-efficiency, and the results show that the new structure has great potential in high-frequency applications.

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Contribution to Silicon-Carbide-MESFET ESD Robustness Analysis

Cited by 8 publications

References 7 publications

SiC tools for reliability study

SiC tools for reliability study

4H-SiC-Based ESD Protection Design With Optimization of Segmented LIGBT for High-Voltage Applications

New 4H-SiC Metal Semiconductor Field Effect Transistors with Double Symmetric Step Buried Oxide Layer for High Energy Efficiency Applications

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