Abstract:A novel 4H-SiC metal semiconductor field effect transistor (MESFET) device with double symmetric step buried oxide layer is proposed and the mechanism is studied through TCAD simulation. The step buried oxide layer is mainly to reduce the current leakage to the substrate and improve drain current. At the same time, the presence of the oxide layer changes the electric field distribution, reduces the electric field concentration phenomenon, and the breakdown voltage is improved. Due to the presence of the step b… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.