semiconductors emerge to circumvent this, and the prevalent materials are aluminum gallium nitride, [5][6] diamond, [7] zinc magnesium oxide, [8][9][10] III-V compounds, etc. Among these candidates, beta-gallium oxide (β-Ga 2 O 3 ) is the most appropriate material with an intrinsic optical direct bandgap of ≈4.9 eV, a large dielectric constant and a high breakdown field strength for solar-blind UV photodetector. [11][12][13][14][15] The metal-semiconductor-metal structure β-Ga 2 O 3 solar-blind UV photodetectors require an external power source to separate photoexcited electron-hole pairs, which contradicts the energy-saving and device miniaturization proposition. The persistent photoconductivity effect in photo-conductive structures will also affect the performance of photo detectors. Consequently, Schottky junction, [16] p-n