Interfacial Engineering of SnS/Ga₂O₃ Heterojunction by SnO for a High‐Performance Self‐Powered Solar‐Blind UV Photodetector

Abstract

semiconductors emerge to circumvent this, and the prevalent materials are aluminum gallium nitride, [5][6] diamond, [7] zinc magnesium oxide, [8][9][10] III-V compounds, etc. Among these candidates, beta-gallium oxide (β-Ga 2 O 3 ) is the most appropriate material with an intrinsic optical direct bandgap of ≈4.9 eV, a large dielectric constant and a high breakdown field strength for solar-blind UV photodetector. [11][12][13][14][15] The metal-semiconductor-metal structure β-Ga 2 O 3 solar-blind UV photodetectors require an external power source to separate photoexcited electron-hole pairs, which contradicts the energy-saving and device miniaturization proposition. The persistent photoconductivity effect in photo-conductive structures will also affect the performance of photo detectors. Consequently, Schottky junction, [16] p-n

Ferroelectric enhanced Ga2O3/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

“…The Ga 2 O 3 /BFMO heterojunction device shows a higher R and D * than the most previously reported ferroelectric and Ga 2 O 3 heterojunction-based self-driven photodetectors, while its response time is still comparable with those reported devices. 17,18,37–48 This excellent device performance can be attributed to the favorable energy-band alignment of the Ga 2 O 3 /BFMO heterojunction and the highly efficient separation of photogenerated carriers caused by the coupling effect of E dp and E Ga 2 O 3 /BFMO .…”

Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar Heterojunction

“…Nowadays, Si-based or GaSb-based devices have drawn enormous attentions in modern optoelectronic devices. − Particularly, Si-based photodetectors are compatible with mature microelectronics technology, which has been realized in mass production. At the same time, near-ultraviolet photodetectors are widely employed in ozone monitoring, solar radiation studies, atmospheric re-entry monitoring, environmental monitoring, national defense early warning, and so on. − However, due to the narrow-band-gap semiconductors and high reflection coefficient and shallow penetration depth of near-ultraviolet light, Si and GaSb are rarely employed for near-ultraviolet photodetection . Nowadays, many studies are attempting to adopt wide-band-gap semiconductor/Si heterojunction photodetectors to achieve ultraviolet photodetector. , Unfortunately, due to the visible light absorption and response of Si, the reported wide-band-gap semiconductor/Si heterojunction photodetectors exhibit poor ultraviolet selectivity, limiting the direct application in ultraviolet detection under a visible light background. − In this work, PbI 2 nanosheets are prepared directly on Si and GaSb wafers by a simple solution process to construct unipolar heterojunctions for near-ultraviolet photodetection.…”

Flexible self-powered solar-blind Schottky photodetectors based on individual Ga2O3 microwire/MXene junctions

“…[1][2][3] Solar-blind photodetectors are used in a wide range of military and civil surveillance applications, including missile tracking, ozone monitoring and flame sensors. 4,5 Typically, broad bandgap semiconductor materials, such as diamond, AlGaN, MgZnO, and Ga 2 O 3 , are used to build solarblind photodetectors. [6][7][8][9] Among them, β-Ga 2 O 3 is a particularly appealing contender due to its low cost and acceptable wide bandgap (4.2-4.9 eV) without the need for alloying processes.…”