Ferroelectric enhanced Ga₂O₃/BFMO-based deep ultraviolet photovoltaic detectors with dual electric fields for photogenerated carrier separation

Abstract

Ga2O3-based photovoltaic-type (i.e., self-driven) deep ultraviolet (DUV) photodetectors have attracted extensive attention due to their broad application prospects in civilian and military fields. However, their common drawback of poor light...

Microstructure Evolution and Electrical Behaviors for High-Performance Cu2O/Zr-Doped β-Ga2O3 Heterojunction Diodes

“…Beta-gallium oxide (β-Ga 2 O 3 ), an ultrawide bandgap semiconductor ( E g > 4.9 eV), has garnered significant attention due to its large Baliga’s figure of merit and high breakdown electric field of ∼8 MV cm –1 . − This makes β-Ga 2 O 3 as a promising candidate for high power, high frequency and high-temperature electronics applications in harsh environment . Additionally, it has proven suitable for optoelectronics applications such as solar blind deep-UV photodetectors and solar cells. − Nevertheless, the development of β-Ga 2 O 3 Schottky barrier diodes has been hindered by a low Schottky barrier height with metals. , An efficient solution involves constructing bipolar all-oxide pn heterojunction devices with β-Ga 2 O 3 and various p-type oxides . In recent years, β-Ga 2 O 3 has been integrated into various pn heterojunctions, including those with Cu 2 O, , SnO, , CuAlO 2 , and NiO. ,, Among them, Cu 2 O shows excellent electrical properties due to its remarkable hole mobility (up to 263 cm 2 V –1 s –1 ) and shallow acceptor levels .…”