2022
DOI: 10.1007/s11051-022-05440-4
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Oxygen vacancies in nanostructured hetero-interfacial oxides: a review

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Cited by 7 publications
(5 citation statements)
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“…The defect reaction for Reaction (3) during reduction process can be written as: Oo0.33em0.33em12O2()ggoodbreak+Vo0.33em$$\begin{equation}{{\mathrm{O}}}_{\mathrm{o}}\ \to \ \frac{1}{2}{{\mathrm{O}}}_2\left( {\mathrm{g}} \right) + {{\mathrm{V}}}_{\mathrm{o}}\ \end{equation}$$where normalOnormalo${{\mathrm{O}}}_{\mathrm{o}}$ and normalVnormalo${{\mathrm{V}}}_{\mathrm{o}}$ are occupied lattice oxygen site and vacant oxygen lattice site. From observing Reactions (3) and (4) one can say that the vacant oxygen lattice site holds two electrons in the trapped state generated during the reduction process 41,42 . The oxygen vacancies generated in the reducing atmosphere are uncharged due to the electrons being trapped.…”
Section: Resultsmentioning
confidence: 99%
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“…The defect reaction for Reaction (3) during reduction process can be written as: Oo0.33em0.33em12O2()ggoodbreak+Vo0.33em$$\begin{equation}{{\mathrm{O}}}_{\mathrm{o}}\ \to \ \frac{1}{2}{{\mathrm{O}}}_2\left( {\mathrm{g}} \right) + {{\mathrm{V}}}_{\mathrm{o}}\ \end{equation}$$where normalOnormalo${{\mathrm{O}}}_{\mathrm{o}}$ and normalVnormalo${{\mathrm{V}}}_{\mathrm{o}}$ are occupied lattice oxygen site and vacant oxygen lattice site. From observing Reactions (3) and (4) one can say that the vacant oxygen lattice site holds two electrons in the trapped state generated during the reduction process 41,42 . The oxygen vacancies generated in the reducing atmosphere are uncharged due to the electrons being trapped.…”
Section: Resultsmentioning
confidence: 99%
“…From observing Reactions (3) and ( 4) one can say that the vacant oxygen lattice site holds two electrons in the trapped state generated during the reduction process. 41,42 The oxygen vacancies generated in the reducing atmosphere are uncharged due to the electrons being trapped. In contrast, the oxygen vacancies generated via doping are negatively charged due to the sub-stitution of dopant ions for zirconium ions.…”
Section: Paramagnetic Defects In 10 Mol% Cao-doped Zirconiamentioning
confidence: 99%
“…Improvement in the FF of photovoltaic devices is generally due to the decreased surface and interface recombination [50]. Moreover, creating higher oxygen vacancies enriches the electrical conductivity of TiO 2 layers, which alternatively helps improve the photovoltaic device parameter of heterojunction devices [10,51,52]. Thus, due to the combined effect of work function tuning, higher oxygen vacancies, higher effective carrier mobility, reduced trap states, and better diode quality, the PCE of T3 devices has been higher [53].…”
Section: Resultsmentioning
confidence: 99%
“…Metal oxide nanostructures are suitable for PT applications because of physiochemical stability and increased availability, in addition to prospects of self-doping through the creation of oxygen vacancies. Specifically, certain oxygen-deficient nonstoichiometric metal oxides [186] such as WO 3−x , MoO 3−x and TiO x with a strong absorption across the UV-NIR range with good thermal stability are being researched on increasingly. For example, titanium oxide, with a bandgap energy of 3 eV in the far UV, can be tailored for absorption in the visible region by doping with other transition metals with high efficacy for PT applications [34,[187][188][189].…”
Section: Doped Metal-oxide Plasmonic Nanomaterialsmentioning
confidence: 99%