Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

“…Indeed, the electronic and optoelectronic properties of arsenides and phosphides semiconductors make them interesting to boost the performances of integrated circuits. [1][2][3] In the past, GaAs was probably one of the most studied materials as it has demonstrated abilities for high-speed and high power applications, 4,5 laser diodes and RF devices for optical network and communications 4,6,7 thanks to high mobility and direct bandgap properties. Co-integration of these functionalities with Si CMOS logic will open up the route of designing new systems.…”

GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report

“…At present there are two main approaches to fabricate QDs emitting near 1.3 µm suitable for the active region in high performance lasers, namely, the overgrowth of InAs nanoislands by an InGaAs alloy [20][21][22][23][24][25][26][27][28][29] and the growth using alternating beams of In, As 2 , Ga, and As 2 . [30][31][32][33][34][35][36][37][38] …”

Spectral and threshold performance of patterned quantum dot lasers

“…Quantum dots offer significant advantages for future optoelectronic devices due to their reduced density of states [1], lower threshold currents [2], extended emission wavelength range [3,4], increased differential efficiency [5], and resistance to the negative impacts of thermal effects [2,6]. Research on quantum dots to date has focused primarily on self-assembly techniques which use the naturally occurring strain energy present in mismatched epitaxial growth to drive the formation of three dimensional structures.…”