Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

Berger, Bastian; Schüler, Nadine; Anger, Sabrina; Gründig-Wendrock, B.; Niklas, J. R.; Dornich, K.

doi:10.1002/pssa.201083994

Cited by 24 publications

(15 citation statements)

References 25 publications

(26 reference statements)

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“…So far selectable pulse widths of ≥5 µs up to CW at rise and fall times of <3 µs have been demonstrated for LEDs. For laser diodes, up to two orders of magnitude faster rise and fall times with corresponding shorter pulse widths were achieved with technology transferred from similar applications in semiconductor research as in Berger et al (2011). It is obvious that the time resolution of the transient measurement system must be able to account for these very short switching times of the light source.…”

Section: Optical Stimulationmentioning

confidence: 99%

Lexsyg — A new system for luminescence research

Richter¹,

Richter²,

Dornich³

2013

Geochronometria

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147

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Abstract:The newly developed lexsyg system by Freiberg Instruments is a versatile luminescence reader, suited for research on the luminescence of materials, fundamental research in luminescence dating, but also for routine mass measurements in retrospective dosimetry as well as in dating application. The 80 sample storage wheel is disconnected from the measurement chamber and therefore crosstalk of optical stimulation is absent and cross-irradiation is negligible from the α-and β-sources, which are providing very uniform irradiations, with the latter especially designed for radiofluorescence (RF) measurement. Optical excitation sources and filter wheels to vary detection wavelengths can be programmed to change at almost any time within measurement sequences, including the automated change of an optional wheel holding up to four different detectors. Thermoluminescence measurements and preheating are possible with a versatile heater, which can be programmed for linear or non-linear heating or cooling, as well as holding a temperature constant. Rates as well as durations can be varied, together with individual ramping, staging and cooling for an almost unlimited number of steps. Violet-and IR-lasers, green and blue LED-arrays can be operated in continuous (CW) or modulated mode (linear/non-linear), and optionally for pulsed as well as time resolved luminescence detection. Six arrays of power LEDs allow the simulation of different bleaching regimes ('solar simulator'), while luminescence detection can be achieved by a variety of photomultiplier tubes and by CCD cameras for spatially resolved measurements and luminescence spectra.

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Section: Optical Stimulationmentioning

confidence: 99%

Lexsyg — A new system for luminescence research

Richter¹,

Richter²,

Dornich³

2013

Geochronometria

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147

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“…This approach has been proved to be efficient, see for example [16]. The code also includes the following physical effects: radiative, Auger, Shockley Read Hall (SRH), surface and back contact recombinations, carrier trapping on defects via rate equations [6,17], thermionic emission at interfaces [18] and trap assisted tunneling [19,20]. The outputs provide the carriers densities profiles n(x,t) and p(x,t), as well as the electric potential for a given semiconductor stack with respect to depth and time.…”

Section: Simulation Toolmentioning

confidence: 99%

“…Bi-exponential behavior has already been studied in the temporal domain by Maiberg et al [6,23] concluding that a shallow trap defect was competing with a fast recombination mechanism. Following this explanation, we introduced in our code one trap center and one SRH recombination center using rate equations for the defects [6,17]. We situated in a first approximation the energy position of the SRH center at mid-gap.…”

Section: Accepted Manuscriptmentioning

confidence: 99%

Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

Bérenguier¹,

Barreau

Jaffré

et al. 2019

Thin Solid Films

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We develop a contactless method based on photoluminescence measurements in the modulated mode: the high-frequency modulated photoluminescence. The high frequency domain allows accessing to carrier dynamics in the nanosecond time scale which is typical for thin films materials. To illustrate the experimental method, we analyze Cu(In,Ga)Se 2 photovoltaic absorbers where recombination mechanisms in the bulk, surface and grain boundaries are not completely understood. We correlate the data with classical time resolved photoluminescence. We show that the combination of the two methods allows, with the help of one dimensional simulations, an estimation of carrier traps and recombination centers parameters in thin films samples.

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“…To measure the effective minority carrier lifetime of cSiTF samples, two different MWPCD setups are chosen. One of these setups was the well‐established WT‐2000, distributed by Semilab Semiconductor Physics Laboratory Co. Ltd ., and the other was the more recently developed characterization tool MDPmap , distributed by Freiberg Instruments GmbH . In both setups, the sample under investigation is excited using a laser pulse.…”

Section: Measurement Setup and Principlementioning

confidence: 99%

Determination of the minority carrier lifetime in crystalline silicon thin-film material

Walter

Rosenits

Berger

et al. 2012

Prog. Photovolt: Res. Appl.

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The effective minority carrier lifetimes on epitaxial silicon thin-film material have been measured successfully using two independent microwave-detected photoconductivity decay setups. Both measurement setups are found to be equally suited to determine the minority carrier lifetime of crystalline silicon thin-film (cSiTF) material. The different measurement conditions to which the sample under investigation is exposed are critically analyzed by both simulations and measurements on a large number of lifetime samples. No systematic deviation between the lifetime results from different measurement setups could be observed, underlining the accuracy of the determined lifetime value. Subsequently, a method to separate the epitaxial bulk lifetime and the total recombination velocity, consisting of front surface and interface recombination between the epitaxial layer and the substrate, is presented. The method, based on different thicknesses of the epitaxial layer, is applied to all batches of this investigation. Each batch consists of samples with the same material quality but different epitaxial layer thicknesses whereas different batches differ in their material quality. In addition, the same method is also successfully applied on individual cSiTF samples. From the results, it can be concluded that the limiting factor of the effective minority carrier lifetime for the investigated solar-grade cSiTF material is the elevated recombination velocity at the interface between epitaxial layer and the substrate compared with microelectronic-grade material. In contrast, the samples cannot be classified into different material qualities by their epitaxial bulk lifetimes. Even on multicrystalline substrate, solar-grade material can exhibit high epitaxial bulk lifetimes comparable to microelectronic-grade material

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Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

Cited by 24 publications

References 25 publications

Lexsyg — A new system for luminescence research

Lexsyg — A new system for luminescence research

Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

Determination of the minority carrier lifetime in crystalline silicon thin-film material

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