Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

Bérenguier, Baptiste; Barreau, Nicolas; Jaffré, Alexandre; Ory, Daniel S.; Guillemoles, Jean‐François; Kleider, Jean‐Paul; Lombez, Laurent

doi:10.1016/j.tsf.2018.11.030

Cited by 18 publications

(12 citation statements)

References 23 publications

(37 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3D). The existence of such patterns has been shown experimentally by the authors in [1]. This kind of shape would be equivalent to the bi-exponential decays in TRPL.…”

Section: B Radiative Recombination + Trappingmentioning

confidence: 66%

See 1 more Smart Citation

High-Frequency Modulated Photoluminescence: a simulation study of cases describing the signature of carrier recombination and trap centers

Bérenguier¹,

Moron²,

Zhao³

et al. 2019

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Self Cite

View full text Add to dashboard Cite

A new setup for recording time dependent photoluminescence signal in both transient and modulated regime was previously assembled. The modulated photoluminescence experiment was achieved in a high frequency domain (up to 10 MHz) while keeping high sensitivity. The methods can thus be applied both to silicon and thin film absorbers. A simulation program was developed for the reconstruction of the experimental data in both time resolved and frequency resolved regimes. In this work we focus on the simulation part and discuss the ability of our setup to identify the carrier recombination paths in thin film solar cells. First results confirm that it should be possible to discriminate between different mechanisms such as radiative, non-radiative recombination and trapping.

show abstract

“…3D). The existence of such patterns has been shown experimentally by the authors in [1]. This kind of shape would be equivalent to the bi-exponential decays in TRPL.…”

Section: B Radiative Recombination + Trappingmentioning

confidence: 66%

“…First results were recently demonstrated on CIGS absorbers without and with CdS overlayer up to 10 MHz modulation frequency [1]. On raw absorbers, the method gave meaningful information whereas the TRPL decay rates were too fast for suitable interpretation.…”

Section: Introductionmentioning

confidence: 99%

High-Frequency Modulated Photoluminescence: a simulation study of cases describing the signature of carrier recombination and trap centers

Bérenguier¹,

Moron²,

Zhao³

et al. 2019

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Self Cite

View full text Add to dashboard Cite

show abstract

“…close to continuous wave excitation by tuning the modulation amplitude). It also enables focusing on mechanisms that usually appear in the noisy end of the decay such as the carrier detrapping 18 .…”

Section: Introductionmentioning

confidence: 99%

“…Great efforts have already been done previously on silicon and CIGS samples [18][19][20] . Reklaitis et al also highlighted this frequency-domain photoluminescence technique in their study of carrier lifetime in InGaN light-emitting diode and proposed Fourier transform of TRPL decay models to fit the data 21,22 .…”

Section: Introductionmentioning

confidence: 99%

Coupled time resolved and high frequency modulated photoluminescence probing surface passivation of highly doped n-type InP samples

Zhao¹,

Bérenguier

Rakotoarimanana

et al. 2021

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Electronic passivation of III-V surfaces is essential for applications in optoelectronic devices. A key aspect is the measurement of the surface recombination properties which can be done by various techniques including transient photoluminescence (TRPL) or luminescence quantum yield. These measurement techniques are always indirect since they suppose postulating a mathematical model for the data interpretation. Most common models use the notion of surface recombination velocity to quantify the surface recombination. In this paper we demonstrate on InP substrate than this notion is not always sufficient to represent the injection dependence of the surface phenomena. The study of power dependence of TRPL decays coupled with Modulated Photoluminescence (MPL) spectra on four samples from the same wafer with different surface treatments (epi-ready, freshly cleaned, after air exposure and with poly-phosphazen passivation) allows us for discriminating between bulk and surface properties. We introduce surface defect trapping as an alternative to explain TRPL decays and MPL phase excitation power dependences of the three non-passivated samples. Surface trap parameters such as capture cross section and defect density are extracted. The passivated sample exhibits invariant response shape on eight orders of magnitude of illumination. The stability of the PL response at high flux is in agreement with the perfect stability of the passivation layer which is able to protect the InP surface without chemical changes over more than one year. They are linked to the nature of the Passivation layer/InP interface. Other surface treatments were found to have an injection dependent responseThe following article has been accepted by the Journal of Applied Physics.

show abstract

“…There have already been some works on MPL at high frequency (HFMPL) by Berenguier et al, who have published two articles. In the first one [13], one can see details on the experimental setup, experimental data obtained on a CIGS absorber, and simulation-based analysis. In particular, it shows that the frequency dependence of the MPL phase can exhibit different behaviours : either a monotonous decrease or a local minimum described as (and denoted in the following) a V-shape.…”

Section: Introductionmentioning

confidence: 99%

Analytical model of the modulated photoluminescence in semiconductor materials

Moron¹,

Bérenguier²,

Alvarez³

et al. 2021

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

Modulated photoluminescence (MPL) is an optoelectronic characterization technique of semiconductor materials. Going to high frequencies enables one to characterize fast phenomena, and so materials with a short lifetime such as chalcogenides or III–V absorbers. Some typical signatures have already been experimentally observed. However, physical mechanisms and quantitative analyses are not well understood yet. Here, using both an analytical approach and a full numerical modeling, we study how the energy position of a defect level, its electron and hole capture cross sections, its density, influence the frequency dependence of the MPL phase. We show that quantitative information can be extracted. We also study the effect of additional surface recombination, and of non homogeneities created by carrier generation profiles or asymmetric top surface and bottom surface recombination velocities, where diffusion of the carriers plays a role and can be limiting at high frequency. Finally we apply our model to an experimental result to extract defect parameters of the sample. Our analysis highlights the usefulness of MPL and the importance of having a proper modeling of the experiment.

show abstract

Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

Cited by 18 publications

References 23 publications

High-Frequency Modulated Photoluminescence: a simulation study of cases describing the signature of carrier recombination and trap centers

High-Frequency Modulated Photoluminescence: a simulation study of cases describing the signature of carrier recombination and trap centers

Coupled time resolved and high frequency modulated photoluminescence probing surface passivation of highly doped n-type InP samples

Analytical model of the modulated photoluminescence in semiconductor materials

Contact Info

Product

Resources

About