Contact etch stop a-SixNy:H layer: A key factor for single polysilicon flash memory data retention

Abstract

Articles you may be interested inCharge trapping properties of the HfO 2 layer with various thicknesses for charge trap flash memory applications Appl. Phys. Lett. 96, 093506 (2010); 10.1063/1.3337103 Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application Appl. Phys. Lett. 96, 043503 (2010); 10.1063/1.3293291 Silicon-oxide-high-κ -oxide-silicon memory using a high-κ Y 2 O 3 nanocrystal film for flash memory application Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxidesemiconductor flash memory Appl. Phys. Lett. 92, 132104 (2008); 10.1063/1.2830000 Three-dimensional self-consistent simulation of the charging time response in silicon nanocrystal flash memoriesThe silicon nitride ͑a-Si x N y :H͒ contact etch stop layer strongly affects data retention performances in single polysilicon nonvolatile memories by acting on the initial charge loss phenomenon. Its improvement has required an analysis of influent plasma enhanced chemical vapor deposition process parameters through a design of experiment approach. The a-Si x N y : H physico-electrical analysis points out that silicon rich compositions especially of its interfacial layer must be avoided to reduce a-Si x N y : H charge amount and as a result to improve the data retention. Indeed, the a-Si x N y : H being near the floating gate, its charges modulation could act as a parasitic memory screening charges stored in the floating gate by capacitive effects.

Investigation of data retention window closure on logic embedded non-volatile memory

“…One of the key reliability concerns for MTP application is DR window closure. Rather than the conventional tunnel oxide leakage model for eFlash, DR degradation model of logic eNVM is attributed to capacitive effect [1][2][3] in which the intrinsic DR behaviors are well established.…”