Abstract:Two mechanisms of data retention (DR) are investigated on logic embedded non-volatile memory (eNVM) in Multiple-Time-Programming (MTP) application. Unlike the typically observed DR degradation after endurance test in flash memory, DR window closure of logic eNVM can be recovered at higher data retention bake temperature and longer bake time due to thermally activated electron de-trapping from interface of tunnel oxide to Si substrate.
In addition, a new DR degradation mechanism called Reverse Code Effect (RCE)… Show more
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