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We report electronic structure and electric field modulation calculations in the width direction for armchair graphene nanoribbons (acGNRs) using a semi-empirical extended Hückel theory. Important band structure parameters are computed, e.g. effectives masses, velocities and bandgaps. For the three types of acGNRs, the pz orbital tight-binding parameters are extracted if feasible. Furthermore, the effect of electric field in the width direction on acGNRs dispersion is explored. It is shown that for the two types of semiconducting acGNRs, an external electric field can reduce the bandgap to a few meV with different quantitative behavior.

The self-assembly of metal nanocrystals including Au, Ag, and Pt on ultrathin oxide for nonvolatile memory applications are investigated. The self-assembly of nanocrystals consists of metal evaporation and selective rapid-thermal annealing (RTA). By controlling process parameters, such as the thickness of the deposited film, the post-deposition annealing temperatures, and the substrate doping concentration, metal nanocrystals with density of 2-4 ϫ 10 11 cm Ϫ2 , diameter less than 8.1 nm, and diameter deviation less than 1.7 nm can be obtained. Observation by scanning-transmission electron microscopy (STEM) and convergent-beam electron diffraction (CBED) shows that nanocrystals embedded in the oxide are nearly spherical and crystalline. Metal contamination of the Si/SiO 2 interface is negligible, as monitored by STEM, energy dispersive x-ray spectroscopy (EDX), and capacitance-voltage (C-V) measurements. The electrical characteristics of metal, nanocrystal nonvolatile memories also show advantages over semiconductor counterparts. Large memory windows shown by metal nanocrystal devices in C-V measurements demonstrate that the work functions of metal nanocrystals are related to the charge-storage capacity and retention time because of the deeper potential well in comparison with Si nanocrystals.

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