Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC

Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature

“…The current varies linearly with the oxide field (Ohmic type conduction), which can occur at an extremely low gate voltage. This type of low field current conduction may be due to a hopping mechanism where current is carried by thermally excited electrons moving between isolated discrete defect states [31]. According to the Lampert's theory of space charge limited mechanism, the Ohm's conduction dominates at low gate bias which can be mathematically described as follows [32]: (13) where J Ohm is the current density, q is electronic charge, n o is concentration of free-charge carrier in thermal equilibrium, m is electronic mobility in the oxide and t ox is physical thickness of the oxide.…”

Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics

“…9(b). This type of low field current conduction may be due to a hopping mechanism where current is carried by thermally excited electrons moving between isolated discrete defect states, which can be mathematically described as follows [40]:…”

Research on Interface Properties of Thermally Grown SiO2 and ALD SiO2 Stacked Structures

“…We used model parameter fitting methods to determine the current conduction mechanism in different electric field. The leakage current in the low electric field range included trap assisted tunneling (TAT), 21,22 hopping conduction. 23,24 Fowler Nordheim (F-N) tunneling, and Poole Frenkel (P-F) effect, which are the leakage mechanisms observed in the high electric field range.…”