Modulation of charge trapping and current-conduction mechanism of TiO2-doped HfO2 gate dielectrics based MOS capacitors by annealing temperature

Zhang, J.W.; He, Gang; Chen, H.S.; Gao, Juan; Chen, X.F.; Jin, Peng; Xiao, D.Q.; Liu, M.; Sun, Zhaoqi

doi:10.1016/j.jallcom.2015.06.042

Cited by 24 publications

(12 citation statements)

References 33 publications

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“…The obtained values of the leakage current density for prepared amorphous films were in good agreement with the literature data, e.g. [3,6,13]. According to Honda et al [3] leakage current density was in the order 10 − 9 A/cm 2 for amorphous HfO 2 -TiO 2 composite film with 10 at% TiO 2 .…”

Section: Resultssupporting

confidence: 89%

“…According to Honda et al [3] leakage current density was in the order 10 − 9 A/cm 2 for amorphous HfO 2 -TiO 2 composite film with 10 at% TiO 2 . However, Zhang et al [13] showed that the lowest leakage current density was obtained for TiO 2 -doped HfO 2 films annealed at 400 °C, and was equal to 5.4 × 10 − 5 A/cm 2 . On the other hand, Ye et al [12] showed that annealing at 500 °C leads to obtaining the (Fig.…”

Section: Resultsmentioning

confidence: 98%

“…Hafnium dioxide (HfO 2 ) has received significant attention in the recent years as a potential replacement for SiO 2 used as the gate dielectric material (high-k oxide) in the complementary metal oxide semiconductor (CMOS) technology [2,3]. HfO 2 is extremely attractive due to its high dielectric constant (ε r ~ 25), large band offset (∆E c ~ 1.5 eV) and chemical stability with silicon [4][5][6][7][8][9][10][11][12][13][14][15]. The present CMOS technology requires materials that are thermally stable at the temperatures over 800 °C in the case of gate dielectrics [16].…”

Section: Introductionmentioning

confidence: 99%

“…One of the effective ways of increasing the crystallization temperature is combining HfO 2 with another complementary gate materials, such as titanium dioxide (TiO 2 ) [6]. Based on some references from the last ten years [6,12,13,18,19,[27][28][29][30][31], it can be noted that doping HfO 2 with TiO 2 can lead to receiving a higher dielectric constant and improvement of electrical properties. In turn, TiO 2 is an attractive material due to its very high dielectric constant (ε r ~ 80-110) and high crystallization temperature [6,13,22].…”

Section: Introductionmentioning

confidence: 99%

“…Based on some references from the last ten years [6,12,13,18,19,[27][28][29][30][31], it can be noted that doping HfO 2 with TiO 2 can lead to receiving a higher dielectric constant and improvement of electrical properties. In turn, TiO 2 is an attractive material due to its very high dielectric constant (ε r ~ 80-110) and high crystallization temperature [6,13,22]. Titanium dioxide can occur in different crystal structures of anatase, rutile and brookite, however, only first two ones can find potential applications in industry [3,[32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

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The effect of post-process annealing on optical and electrical properties of mixed HfO2–TiO2 thin film coatings

Obstarczyk

Kaczmarek

Mazur

et al. 2019

J Mater Sci: Mater Electron

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In this paper a comparison of electrical and optical properties of mixed hafnium-titanium oxides is described. Thin films were deposited with the use of the magnetron co-sputtering method. For further analysis (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71) Ox coatings, which were amorphous directly after the deposition process, were chosen,. Moreover, post-process annealing was also performed in order to compare the electrical and optical properties of amorphous and nanocrystalline thin films with the same material composition. It was found that the phase transition from amorphous to orthorhombic HfTiO 4 occurred in the case of (Hf 0.52 Ti 0.48)Ox coating at 650 °C. In turn, the phase transition to TiO 2-anatase was observed at the temperature of 600 °C in the case of (Hf 0.29 Ti 0.71)Ox thin film. The leakage current for both amorphous coatings was in the range of 10 −7-10 −8 A/cm 2. After additional annealing and phase transition, the leakage current slightly decreased for (Hf 0.29 Ti 0.71)Ox thin film, while in the case of (Hf 0.52 Ti 0.48)Ox sample the resistance switching effect was observed. The dielectric constant was equal to 24 and 25 for amorphous (Hf 0.52 Ti 0.48)Ox and (Hf 0.29 Ti 0.71)Ox films, respectively. However, after the phase transition it decreased to 15 for (Hf 0.52 Ti 0.48)Ox and increased to 51 for (Hf 0.29 Ti 0.71)Ox film. The results of optical studies showed that amorphous thin films were well transparent in a visible light range with an average transparency of ca. 85%. After the phase transition to HfTiO 4-orthorhombic and TiO 2-anatase, a slight decrease in the transparency level by 3% and a redshift of the cutoff wavelength was observed. Moreover, additional annealing caused small changes of the optical band gap energy, refractive index and extinction coefficient.

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