Conduction mechanisms, dynamics and stability in ReRAMs

Wang, Chen; Wu, Huaqiang; Gao, Bin; Zhang, Teng; Yang, Yuchao; Qian, He

doi:10.1016/j.mee.2017.11.003

Cited by 84 publications

(67 citation statements)

References 92 publications

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“…RTN decreases the memory margin between the HRS and LRS because of the extensive fluctuations in the read current during the read operation. Due to the effect of RTN, the read margin, scaling potential and the multilevel cell capability of a RRAM cell are greatly affected [114]; thus, it needs to be investigated to achieve reliable reprinted from ref. [114] performance.…”

Section: Effect Of Operating Temperature and Random Telegraph Noisementioning

confidence: 99%

“…Due to the effect of RTN, the read margin, scaling potential and the multilevel cell capability of a RRAM cell are greatly affected [114]; thus, it needs to be investigated to achieve reliable reprinted from ref. [114] performance. To investigate the effect of bottom electrode on RTN, an analysis of Ta 2 O 5 /TiO 2 RRAM [115] was carried out.…”

Section: Effect Of Operating Temperature and Random Telegraph Noisementioning

confidence: 99%

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Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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In this manuscript, recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed. First, a brief overview of the field of emerging memory technologies is provided. The material properties, resistance switching mechanism, and electrical characteristics of RRAM are discussed. Also, various issues such as endurance, retention, uniformity, and the effect of operating temperature and random telegraph noise (RTN) are elaborated. A discussion on multilevel cell (MLC) storage capability of RRAM, which is attractive for achieving increased storage density and low cost is presented. Different operation schemes to achieve reliable MLC operation along with their physical mechanisms have been provided. In addition, an elaborate description of switching methodologies and current voltage relationships for various popular RRAM models is covered in this work. The prospective applications of RRAM to various fields such as security, neuromorphic computing, and non-volatile logic systems are addressed briefly. The present review article concludes with the discussion on the challenges and future prospects of the RRAM.

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Section: Effect Of Operating Temperature and Random Telegraph Noisementioning

confidence: 99%

Section: Effect Of Operating Temperature and Random Telegraph Noisementioning

confidence: 99%

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

2020

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“…Metal filament formation has been the preferred mechanism to explain resistance switching in inorganic memristors (Van den Hurk et al, 2015;Mohammad et al, 2016;Li et al, 2017;Wang et al, 2018), but also in organic ones (He et al, 2009;Sparvoli et al, 2019). According to this model, when a positive voltage is applied to the active electrode, the material is oxidized electrochemically and the resulting cations migrate through the insulating layer up to reach the cathode.…”

Section: Metallic Filamentary Conductionmentioning

confidence: 99%

Resistive Switching in Graphene Oxide

et al. 2020

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The search and investigation of resistive switching materials, the most consolidated form of solid-state memristors, has become one of the fastest growing areas in the field of electronics. This is not only due to the huge commercial interest in developing the so-called Resistive Random-Access Memories (ReRAMs) but also because resistive switching materials are gathering way to new forms of analog computation. Unlike in the field of traditional electronics technologies, where Silicon has monopolized most of the applications, the area of solid-state memristors is opened to a broad set of candidates that may contribute to unprecedented applications. In particular, the use of organic-based resistive switching materials can provide additional functionalities as structural flexibility for conformal integration or introduce new and cost-effective fabrication technologies. Following this new wave of organic memristive materials, this work aims at reviewing the existing models explaining the origins of resistive switching in Graphene Oxide, one of the most promising contenders on the battlefield of emerging memristive materials due to its low cost and easy processing methods. Within this manuscript, we will revisit the different theories supporting the phenomenology of resistive switching in this material nourishing the discussion with experimental results supporting the three main existing theories.

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“…During the sweep from 0 to +30 V (sweep 1), an increase in current was observed at 20 V, which corresponds to switching to a low-resistance state (LRS). The mechanisms of resistive switching can be classified into two types: namely, filament and interface types [4][5][6]. As evidenced from the sweep from +30 to −30 V (sweeps 2 and 3), the device clearly shows a rectified current-voltage curve and subsequently exhibits switching to the LRS at around −20 V, which is characteristic of the interface-type resistive switching [5,28].…”

Section: Resultsmentioning

confidence: 99%

“…Metal oxides are used in modern electronics as a high-κ dielectric for miniaturized transistors [1][2][3] and as a switching medium for resistance change memories [4][5][6] including memristors [7][8][9]. Among various metal oxides, titania [10][11][12] is significantly important as it is ubiquitous, which is due to the 10th highest Clarke number of Ti.…”

Section: Introductionmentioning

confidence: 99%

Tolerance against conducting filament formation in nanosheet-derived titania thin films

et al. 2020

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Herein, titania thin films are fabricated by a facile liquid-phase method based on vacuum filtration of a colloidal suspension of titania nanosheets, which is followed by thermal annealing to transform the nanosheet film into anatase TiO 2 . Nanosheet-derived titania thin films exhibit poor resistive switching with an interface-type mechanism. This behaviour is distinct from the filamentary switching that has been observed with titania thin films fabricated by other conventional techniques. This tolerance against conducting-filament formation may be ascribed to a low concentration of oxygen vacancies in nanosheet-derived films, which is expected because of the O/Ti ratio of titania (Ti 0.87 O 2 ) nanosheets being larger than that of TiO 2 . Besides, the dielectric breakdown strength of nanosheet-derived films is found to be comparable to or higher than that of titania thin films fabricated by other techniques. These findings clearly indicate the usefulness of nanosheet-derived titania thin films for dielectric applications.

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Conduction mechanisms, dynamics and stability in ReRAMs

Cited by 84 publications

References 92 publications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Resistive Switching in Graphene Oxide

Tolerance against conducting filament formation in nanosheet-derived titania thin films

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