Conduction mechanism of leakage current due to the traps in ZrO<sub>2</sub>thin film

Seo, Yasuhisa; Lee, Sangyouk; An, Ilsin; Song, Chul-Gyu; Jeong, Hoon

doi:10.1088/0268-1242/24/11/115016

Cited by 57 publications

(19 citation statements)

References 25 publications

(29 reference statements)

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“…This mechanism could be easily identified whenever Ohmic conduction is observed at low field, followed by power-law dependence (I ∝ V 2 ) of the current density is observed in high field [80][81][82]. In low field regime, the conduction mechanism is dominated by the thermally generated free electrons in the oxide film.…”

Section: Space-charge-limited-conduction (Sclc)mentioning

confidence: 92%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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Abstract:Resistive switching effect in transition metal oxide (TMO) based material is often associated with the valence change mechanism (VCM). Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF) geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox) process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC), trap-assisted tunneling (TAT) and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

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Section: Space-charge-limited-conduction (Sclc)mentioning

confidence: 92%

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

2015

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“…Based on current-voltage characteristics, conduction mechanism of the leakage current in each of the structure was determined. For electric field E within the values up to about 6 MV/cm for Al 2 O 3 /4H-SiC and up to 7 MV/cm for Al 2 O 3 /SiO 2 /4H-SiC structures the best fits to experimental data were obtained by using formula describing trap-assisted tunneling current (J TAT ) [9]:…”

Section: Resultsmentioning

confidence: 99%

“…For electric field values above 6 MV/cm and 7 MV/cm, the dominant leakage current mechanism is tunneling through triangular barrier, i.e., tunneling in Folwer-Nordheim regime (J FN ). The leakage current associated with Fowler-Nordheim tunneling is described by the following formula [9]:…”

Section: Electrical Characterizationmentioning

confidence: 99%

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

Taube

Guziewicz

Kosiel

et al. 2016

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO 2 buffer layer on the electrical properties of the MOS structures with Al 2 O 3 layer has been examined. Critical electric field values at the level of 7.5-8 MV/cm were obtained. The use of 5 nm thick SiO 2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al 2 O 3 /4H-SiC MOS is about of 1x10 13 eV -1 cm -2 . In contrast, the density of the trap states in the Al 2 O 3 /SiO 2 /4H-SiC structure is lower about of one decade of magnitude i.e. 1x1012 eV -1 cm -2 . A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO 2 buffer layer.Key words: aluminum oxide, MOS, silicon carbide, 4H-SiC, high-κ dielectrics. Characterization of Al Experimental detailsMOS structures used in this study were fabricated on low-resistivity 4H-SiC substrates (n ~ 5×10 18 cm -3 ) with n-type (n ~ 5×10 ), 10 μm thick epitaxial layer. Prior to the MOS fabrication the substrates were cleaned in organic solvents and dipped in 10% HF solution to remove the native oxide. The nickel layer was sputtered on the backside and annealed (Ar, 1050°C) to form an ohmic contact. Two kinds of samples were fabricated. On one part of samples, 5 nm SiO 2 buffer layer was fabricated by PECVD using SiH 4 and N 2 O plasma. Afterwards, a 50 nm layer of Al 2 O 3 was deposited on all samples by ALD. Al 2 O 3 layers were deposited at 200°C using trimethylaluminium (TMA) and water vapor (H 2 O) as Al and O precursors, respectively. Finally, a top layer of Ti/Al gate electrode (φ = 200 µm) was deposited on top of Al 2 O 3 by sputtering and patterned by lift-off technique. A schematic sketch of fabricated Al 2 O 3 /4H-SiC and Al 2 O 3 /SiO 2 /4H-SiC structures is presented in Fig. 1.

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“…other high-κ gate dielectrics in the literature. La incorporation in ZrO 2 and Nb 2 O 5 can improve their insulation property by passivating their traps (that can lead to trap-assisted tunneling) [31], [32] and enlarging their bandgap, resulting in lower leakage current (2.99 × 10 −7 and 1.25 × 10 −6 A/cm 2 at 1 MV/cm for LaZrO and LaNbO, respectively). Although La 2 O 3 has largest bandgap (∼6 eV) among the oxides, its leakage current density is relatively large due to the hygroscopicity of La 2 O 3 .…”

Section: E Effect Of La Incorporation On the Leakage Current Of The mentioning

confidence: 99%

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

Han

Tang

Leung

et al. 2015

IEEE Trans. Electron Devices

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The effects of La incorporation in three transitionmetal (TM = Y, Zr, and Nb) oxides as gate dielectric of pentacene organic thin-film transistor (OTFT) have been investigated. La incorporated in Zr oxide and Nb oxide greatly decreases their trap density (as confirmed by low-frequency noise measurement) by passivating their oxygen vacancies, resulting in larger pentacene grains grown on them (as shown by atomic force microscopy) and thus higher carrier mobility for the OTFT due to less grain-boundary scattering. The carrier mobility of the ZrLaO-and NbLaO-OTFTs is about 70 times and 300 times higher than that of their counterparts based on ZrO 2 and Nb 2 O 5 , respectively. However, La incorporated in Y 2 O 3 increases its trap density by roughening its surface, causing smaller pentacene grains grown and thus lower carrier mobility. On the other hand, all the three TM elements incorporated in La 2 O 3 can result in more moisture-resistant gate dielectric with smoother surface, resulting in larger pentacene grains grown and thus higher carrier mobility for the OTFT.Index Terms-High-κ gate dielectric, La incorporation, low-frequency noise (LFN), organic thin-film transistor (OTFT), transition-metal (TM) oxides.

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Conduction mechanism of leakage current due to the traps in ZrO₂thin film

Cited by 57 publications

References 25 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

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Conduction mechanism of leakage current due to the traps in ZrO2thin film

Cited by 57 publications

References 25 publications

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

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Conduction mechanism of leakage current due to the traps in ZrO₂thin film