Conductance of functionalized nanotubes, graphene and nanowires: from <i>ab initio</i> to mesoscopic physics

Blase, Xavier; Adessi, Ch.; Biel, Blanca; López-Bezanilla, Alejandro; Fernández-Serra, M.-V.; Margine, E. R.; Triozon, François; Roche, Stephan

doi:10.1002/pssb.201000135

Cited by 16 publications

(13 citation statements)

References 63 publications

(69 reference statements)

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“…For this purpose, we favor HfS 3 , In 4 Se 3 , In 4 Te 3 , or the electron gas that forms at the surface/interface of InP and InAs as SOC channel materials, because they are likely to be scalable to spatial channel widths of 10 nm or less. Concern about edge scattering has attracted the attention of theorists [60]- [65] and has been found to have a major influence in experiment [66]- [68]. The trichalcogenides, MX 3 , and other transition metal trichalcogenides (TMTCs) such as In 4 X 3 (X = Se, Te) possess a unique quasi-1-D structure that makes devices scaled to dimensions less than nm appear possible.…”

Section: Induced Polarizationmentioning

confidence: 99%

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Dowben

Binek

Zhang

et al. 2018

IEEE J. Explor. Solid-State Comput. Devices Circuits

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Here, we outline magnetoelectric (ME) device concepts based on the voltage control of the interface magnetism of an ME antiferromagnet gate dielectric formed on a very thin semiconductor channel with large spin-orbit coupling (SOC). The emphasis of the ME spin field-effect transistors (ME spin FET) is on an antiferromagnet spin-orbit read logic device and a ME spin-FET multiplexer. Both spin-FET schemes exploit the strong SOC in the semiconducting channel materials but remain dependent on the voltage-induced switching of an ME, so that the switching time is limited only by the switching dynamics of the ME. The induced exchange field spin polarizes the channel material, breaks time-reversal symmetry, and results in the preferential charge transport direction, due to the spin-orbit-driven spin-momentum locking. These devices could provide reliable room temperature operation with large on/off ratios, well beyond what can be achieved using magnetic tunnel junctions. All of the proposed device spintronic functionalities without the need to switch a ferromagnet, yielding a faster writing speed (∼10 ps) at a lower cost in energy (∼10 aJ), excellent temperature stability (operational up to 400 K or above), and requiring far fewer device elements (transistor equivalents) than CMOS.INDEX TERMS Magnetoelectric (ME) transistor, nonvolatile logic and memory, spin-orbit coupling (SOC).

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Section: Induced Polarizationmentioning

confidence: 99%

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Dowben

Binek

Zhang

et al. 2018

IEEE J. Explor. Solid-State Comput. Devices Circuits

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“…[20][21][22] By contrast armchair ribbons (AGNR) are semiconducting with width-dependent band gaps and without affinity to magnetic instabilities. [4,[23][24][25][26][27][28][29][30][31] In this letter we further investigate the electronic and atomistic structure of mono-hydrogenated AGNRs and show that interesting quantum effects arise, nevertheless. We formulate selection rules for the transverse momenta of the ribbon.…”

mentioning

confidence: 99%

Quantum size effects in the atomistic structure of armchair nanoribbons

et al. 2012

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Quantum size effects in armchair graphene nano-ribbons (AGNR) with hydrogen termination are investigated via density functional theory (DFT) in Kohn-Sham formulation. "Selection rules" will be formulated, that allow to extract (approximately) the electronic structure of the AGNR bands starting from the four graphene dispersion sheets. In analogy with the case of carbon nanotubes, a threefold periodicity of the excitation gap with the ribbon width (N , number of carbon atoms per carbon slice) is predicted that is confirmed by ab initio results. While traditionally such a periodicity would be observed in electronic response experiments, the DFT analysis presented here shows that it can also be seen in the ribbon geometry: the length of a ribbon with L slices approaches the limiting value for a very large width 1 ≪ N (keeping the aspect ratio small N ≪ L) with 1/Noscillations that display the electronic selection rules. The oscillation amplitude is so strong, that the asymptotic behavior is non-monotonous, i.e., wider ribbons exhibit a stronger elongation than more narrow ones.

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“…Previous experiments, in which defects were created by ion irradiation, indicate that for long CNTs the strong localization regime can be achieved, where the conductance decreases exponentially with the CNT length [9]. This was also studied theoretically for different defect types [17][18][19][20][21][22], especially for vacancies [23][24][25][26][27], and also for other materials like silicon nanowires [28]. First analytic derivations of White and Todorov showed that the localization exponent depends linearly on the tube diameter [29].…”

Section: Introductionmentioning

confidence: 92%

Electronic transport through defective semiconducting carbon nanotubes

Teichert¹,

Zienert²,

Schuster³

et al. 2018

J. Phys. Commun.

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We investigate the electronic transport properties of semiconducting (m, n) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport calculations based on recursive Green's function techniques and an underlying density-functional-based tight-binding model for the description of the electronic structure. Zigzag CNTs as well as chiral CNTs of different diameter are considered. Different defects are exemplarily represented by monovacancies and divacancies. We show the energy-dependent transmission and the temperature-dependent conductance as a function of the number of defects. In the limit of many defetcs, the transport is described by strong localization. Corresponding localization lengths are calculated (energy dependent and temperature dependent) and systematically compared for a large number of CNTs. It is shown, that a distinction by (m−n)mod 3 has to be drawn in order to classify CNTs with different bandgaps. Besides this, the localization length for a given defect probability per unit cell depends linearly on the CNT diameter, but not on the CNT chirality. Finally, elastic mean free paths in the diffusive regime are computed for the limit of few defects, yielding qualitatively same statements.

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Conductance of functionalized nanotubes, graphene and nanowires: from ab initio to mesoscopic physics

Cited by 16 publications

References 63 publications

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor

Quantum size effects in the atomistic structure of armchair nanoribbons

Electronic transport through defective semiconducting carbon nanotubes

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