We study quasi-ballistic electron transport in metallic (6, 0) carbon nanotubes (CNTs) of variable length in contact with Al, Cu, Pd, Pt, Ag, and Au electrodes by using the non-equilibrium Green's function formalism in combination with either density functional theory or self-consistent extended Hückel theory. We find good agreement between both. Visualizing the local device density of states of the systems gives a descriptive link between electronic structure and transport properties. In comparison with bare finite and infinite tubes, we show that the electronic structure of short metallic CNTs is strongly modified by the presence of the metallic electrodes, which leads to pronounced size effects in the conductance. The mean conductances and linear response currents allow a ranking of the metals regarding their ability to form low-Ohmic contacts with the nanotube: Ag < or approximately equel to Au < Cu <

Graphene-based conductors such as films and fibers aim to transfer graphene's extraordinary properties to the macroscopic scale. They show great potential for large-scale applications, but there is a lack of theoretical models to describe their electrical characteristics. We present a network simulation method to model the electrical conductivity of graphene-based conductors. The method considers all of the relevant microscopic parameters such as graphene flake conductivity, interlayer conductivity, packing density, and flake size. To provide a mathematical framework, we derive an analytical expression, which reproduces the essential features of the network model. We also find good agreement with experimental data. Our results offer production guidelines and enable the systematic optimization of high-performance graphene-based conductor materials. A generalization of the model to any conductor based on two-dimensional materials is straightforward.

We study the transport properties of defective single-walled armchair carbon nanotubes (CNTs) on a mesoscopic length scale. Monovacancies and divancancies are positioned randomly along the CNT. The calculations are based on a fast, linearly scaling recursive Greenʼs function formalism that allows us to treat large systems quantum-mechanically. The electronic structure of the CNT is described by a density-functional-based tight-binding model. We determine the influence of the defects on the transmission function for a given defect density by statistical analysis. We show that the system is in the regime of strong localization (i.e. Anderson localization). In the limit of large disorder the conductance scales exponentially with the number of defects. This allows us to extract the localization length. Furthermore, we study in a systematic and comprehensive way, how the conductance, the conductance distribution, and the localization length depend on defect probability, CNT diameter, and temperature.

We present electronic transport calculations for single wall carbon nanotubes (CNTs) using two highly idealized models to describe the electrodes and their contact to the CNT. In the first model we use CNT-electrodes and in the second one we apply the wide-band approximation, neglecting any atomic structure within the electrodes. The single orbital tight-binding approximation is used to describe the electronic structure of the CNTs. This enables us to apply highly efficient decimation techniques to reduce the size of the finite central Hamiltonian. Semi-infinite CNT-electrodes can be included iteratively using a similar method. Electronic transport calculations are carried out within the Landauer formalism