Strong localization in defective carbon nanotubes: a recursive Greenʼs function study

Teichert, Fabian; Zienert, Andreas; Schuster, Jörg; Schreiber, Michael

doi:10.1088/1367-2630/16/12/123026

Cited by 13 publications

(24 citation statements)

References 50 publications

(71 reference statements)

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“…It is shown that a distinction concerning (m−n)mod 3 has to be made, which discriminates three groups of CNTs with different quantitative band gap dependencies. Besides this, the localization length as well as the elastic mean free path at a given energy can be described very well by linear functions of the tube diameter, in agreement with former studies [30,32]. The investigation of CNTs of different chiral angles, covering the full range, shows that a further dependence on this structural parameter can be excluded.…”

Section: Discussionsupporting

confidence: 89%

“…Flores et al verified this for the first time with quantum transport calculations for metallic CNTs [25]. We confirmed this by a more comprehensive analysis [30] and extended it to defect mixtures [31]. An investigation of semiconducting zig-zag CNTs [32] showed qualitatively similar results for the localization and the diffusive regime at fixed energy.…”

Section: Introductionsupporting

confidence: 77%

“…For a fixed defect probability and varying system length L the transport in the limit of large L resp. small  can be described by The same exponential dependence holds for fixed length and varying defect probability or-in our casenumber of defects, as shown in [30,32]:…”

Section: Transmission and Transport Regimesmentioning

confidence: 52%

“…(a) Device configuration for the quasi-1D quantum transport theory[30]. A finite central region C is connected to two halfinfinite electrodes L and R. (b) Subdivision of C into M blocks for the application of the RGF.…”

mentioning

confidence: 99%

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Electronic transport through defective semiconducting carbon nanotubes

Teichert¹,

Zienert²,

Schuster³

et al. 2018

J. Phys. Commun.

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We investigate the electronic transport properties of semiconducting (m, n) carbon nanotubes (CNTs) on the mesoscopic length scale with arbitrarily distributed realistic defects. The study is done by performing quantum transport calculations based on recursive Green's function techniques and an underlying density-functional-based tight-binding model for the description of the electronic structure. Zigzag CNTs as well as chiral CNTs of different diameter are considered. Different defects are exemplarily represented by monovacancies and divacancies. We show the energy-dependent transmission and the temperature-dependent conductance as a function of the number of defects. In the limit of many defetcs, the transport is described by strong localization. Corresponding localization lengths are calculated (energy dependent and temperature dependent) and systematically compared for a large number of CNTs. It is shown, that a distinction by (m−n)mod 3 has to be drawn in order to classify CNTs with different bandgaps. Besides this, the localization length for a given defect probability per unit cell depends linearly on the CNT diameter, but not on the CNT chirality. Finally, elastic mean free paths in the diffusive regime are computed for the limit of few defects, yielding qualitatively same statements.

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Section: Discussionsupporting

confidence: 89%

Section: Introductionsupporting

confidence: 77%

Section: Transmission and Transport Regimesmentioning

confidence: 52%

mentioning

confidence: 99%

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Electronic transport through defective semiconducting carbon nanotubes

Teichert¹,

Zienert²,

Schuster³

et al. 2018

J. Phys. Commun.

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“…has a large impact on the electron transport [6][7][8][9][10][11][12][13], defects are in the focus of scientific work. Theoretical studies examine electronic structure and transport properties of defective CNTs, where a geometry optimization is used in order to extract the real structure of CNTs with single defects, periodic defects, or randomly distributed defects [14][15][16][17][18][19][20][21][22][23][24]. But within the geometry optimization only short CNTs are typically considered, including the shortrange reconstruction of the atoms around the defect.…”

Section: Introductionmentioning

confidence: 99%

Influence of defect-induced deformations on electron transport in carbon nanotubes

2018

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We theoretically investigate the influence of defect-induced long-range deformations in carbon nanotubes on their electronic transport properties. To this end we perform numerical ab-initio calculations using a density-functional-based tight-binding model for various tubes with vacancies. The geometry optimization leads to a change of the atomic positions. There is a strong reconstruction of the atoms near the defect (called 'distortion') and there is an additional long-range deformation. The impact of both structural features on the conductance is systematically investigated. We compare short and long CNTs of different kinds with and without long-range deformation. We find for the very thin (9, 0)-CNT that the long-range deformation additionally affects the transmission spectrum and the conductance compared to the short-range lattice distortion. The conductance of the larger (11, 0)or the (14, 0)-CNT is overall less affected implying that the influence of the long-range deformation decreases with increasing tube diameter. Furthermore, the effect can be either positive or negative depending on the CNT type and the defect type. Our results indicate that the long-range deformation must be included in order to reliably describe the electronic structure of defective, small-diameter zigzag tubes.

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Advanced Characterization Methods for Electrical and Sensoric Components and Devices at the Micro and Nano Scales

Sheremet

Meszmer

Blaudeck

et al. 2019

Physica Status Solidi (a)

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The present study covers the nanoanalysis methods for four key material characteristics: electrical and electronic properties, optical, stress and strain, and chemical composition. With the downsizing of the geometrical dimensions of the electronic, optoelectronic, and electromechanical devices from the micro to the nanoscale and the simultaneous increase in the functionality density, the previous generation of microanalysis methods is no longer sufficient. Therefore, the metrology of materials' properties with nanoscale resolution is a prerequisite in materials' research and development. The article reviews the standard analysis methods and focuses on the advanced methods with a nanoscale spatial resolution based on atomic force microscopy (AFM): current-sensing AFM (CS-AFM), Kelvin probe force microscopy (KPFM), and hybrid optical techniques coupled with AFM including tip-enhanced Raman spectroscopy (TERS), photothermal-induced resonance (PTIR) characterization methods (nano-Vis, nano-IR), and photo-induced force microscopy (PIFM). The simultaneous acquisition of multiple parameters (topography, charge and conductivity, stress and strain, and chemical composition) at the nanoscale is a key for exploring new research on structure-property relationships of nanostructured materials, such as carbon nanotubes (CNTs) and nano/microelectromechanical systems (N/MEMS). Advanced nanocharacterization techniques foster the design and development of new functional materials for flexible hybrid and smart applications.

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Strong localization in defective carbon nanotubes: a recursive Greenʼs function study

Cited by 13 publications

References 50 publications

Electronic transport through defective semiconducting carbon nanotubes

Electronic transport through defective semiconducting carbon nanotubes

Influence of defect-induced deformations on electron transport in carbon nanotubes

Advanced Characterization Methods for Electrical and Sensoric Components and Devices at the Micro and Nano Scales

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