Voltage-controlled spin electronics is crucial for continued progress in information technology. It aims at reduced power consumption, increased integration density and enhanced functionality where non-volatile memory is combined with highspeed logical processing. Promising spintronic device concepts use the electric control of interface and surface magnetization. From the combination of magnetometry, spin-polarized photoemission spectroscopy, symmetry arguments and first-principles calculations, we show that the (0001) surface of magnetoelectric Cr 2 O 3 has a roughness-insensitive, electrically switchable magnetization. Using a ferromagnetic Pd/Co multilayer deposited on the (0001) surface of a Cr 2 O 3 single crystal, we achieve reversible, room-temperature isothermal switching of the exchange-bias field between positive and negative values by reversing the electric field while maintaining a permanent magnetic field. This effect reflects the switching of the bulk antiferromagnetic domain state and the interface magnetization coupled to it. The switchable exchange bias sets in exactly at the bulk Néel temperature.S pintronics strives to exploit the spin degree of freedom of electrons for an advanced generation of electronic devices 1,2 . In particular, voltage-controlled spin electronics is of vital importance to continue progress in information technology. The main objective of such an advanced technology is to reduce power consumption while enhancing processing speed, integration density and functionality in comparison with presentday complementary metal-oxide-semiconductor electronics [3][4][5][6] . Almost all existing and prototypical solid-state spintronic devices rely on tailored interface magnetism, enabling spin-selective transmission or scattering of electrons. Controlling magnetism at thin-film interfaces, preferably by purely electrical means, is a key challenge to better spintronics [7][8][9][10] . The absence of direct coupling between magnetization and electric field makes the electric control of collective magnetism in general, and surface and interface magnetism in particular, a scientific challenge. The significance of controlled interface magnetism started with the exchange-bias effect. Exchange bias is a coupling phenomenon at magnetic interfaces that manifests itself most prominently in the shift of the ferromagnetic hysteresis loop along the magnetic-field axis and is quantified by the magnitude µ 0 H EB of the shift 11 . The exchange-bias pinning of ferromagnetic thin films is employed in giant magnetoresistance and tunnelling magnetoresistance structures of magnetic-field sensors and modern magnetic read heads 12 . Electric control of exchange bias has been proposed for various spintronic applications that go beyond giant magnetoresistance and tunnelling magnetoresistance technology 5 . One approach to such voltage control requires a reversible, laterally uniform, isothermal electric tuning of the exchange-bias field at room temperature, which remains a significant challenge.Early attemp...

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Nanostructured magnetic materials have a variety of promising applications spreading from nano-scale electronic devices, sensors and high-density data storage media to controlled drug delivery and cancer diagnostics/treatment systems. Magnetic nanoparticles offer the most natural and elegant way for fabrication of such (multi-) functional materials. In this review, we briefly summarize the recent progress in the synthesis of magnetic nanoparticles (which now can be done with precise control over the size and surface chemistry), and nanoscale interactions leading to their self-assembly into 1D, 2D or 3D aggregates. Various approaches to self-organization, directed-, or template-assisted assembly of these nanostructures are discussed with the special emphasis on magnetic-field enabled interactions. We also discuss new physical phenomena associated with magnetic coupling between nanoparticles and their interaction with a substrate and the characterization of the physical properties at the nanoscale using various experimental techniques (including scanning quantum interferometry (SQUID) and magnetic force microscopy). Applications of magnetic nanoparticle assemblies in data storage, spintronics, drug delivery, cancer therapy, and prospective applications such as adaptive materials and multifunctional reconfigurable materials are also highlighted.

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Magnetoelectric films are proposed as key components for spintronic applications. The net magnetic moment created by an electric field in a magnetoelectric thin film influences the magnetization state of a neighbouring ferromagnetic layer through exchange coupling. Pure electrical control of magnetic configurations of giant magnetoresistance spin valves and tunnelling magnetoresistance elements is therefore achievable. Estimates based on documented magnetoelectric tensor values show that exchange fields reaching 100 mT can be obtained. We propose a mechanism alternative to current-induced magnetization switching, providing access to a wide range of device impedance values and opening the possibility of simple logic functions.

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We report large (>10%) magnetization modulation by ferroelectric polarization reversal in the ferroelectric-ferromagnetic BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) heterostructures. We find that the electrically induced change in magnetization is limited to the BTO/LSMO interface but extends about 3 nm deep into the LSMO layer—far beyond the expected screening length of metallic LSMO. It is suggested that this effect is due to a metal-insulator transition occurring at the BTO/LSMO interface as a result of electrostatic doping.