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We report on the observation of the spin Seebeck effect in antiferromagnetic MnF2. A device scale on-chip heater is deposited on a bilayer of MnF2 (110) (30 nm)/Pt (4 nm) grown by molecular beam epitaxy on a MgF2 (110) substrate. Using Pt as a spin detector layer it is possible to measure thermally generated spin current from MnF2 through the inverse spin Hall effect. The low temperature (2 -80 K) and high magnetic field (up to 140 kOe) regime is explored. A clear spin flop transition corresponding to the sudden rotation of antiferromagnetic spins out of the easy axis is observed in the spin Seebeck signal when large magnetic fields (>9 T) are applied parallel the easy axis of the MnF2 thin film. When magnetic field is applied perpendicular to the easy axis, the spin flop transition is absent, as expected.

Crystalline materials that combine electrical polarization and magnetization could be advantageous in applications such as information storage, but these properties are usually considered to have incompatible chemical bonding and electronic requirements. Recent theoretical work on perovskite materials suggested a route for combining both properties. We used crystal chemistry to engineer specific atomic displacements in a layered perovskite, (Ca(y)Sr(1- y))(1.15)Tb(1.85)Fe2O7, that change its symmetry and simultaneously generate electrical polarization and magnetization above room temperature. The two resulting properties are magnetoelectrically coupled as they arise from the same displacements.

By close analogy with multiferroic materials with coexisting long-range electric and magnetic orders a "multiglass" scenario of two different glassy states is observed in Sr(0.98)Mn(0.02)TiO(3) ceramics. Sr-site substituted Mn2+ ions are at the origin of both a polar and a spin glass with glass temperatures T(g) approximately equal to 38 K and < or =34 K, respectively. The structural freezing triggers that of the spins, and both glassy systems show individual memory effects. Thanks to strong spin-phonon interaction within the incipient ferroelectric host crystal SrTiO3, large higher order magnetoelectric coupling occurs between both glass systems.

The coexistence of cluster glass with long-range antiferromagnetic order in the relaxor ferroelectric PbFe 0.5 Nb 0.5 O3 is elucidated. While the transition at T(N) = 153 K on the infinite antiferromagnetic cluster induces 3m symmetry with large EH2 magnetoelectric response, the disconnected subspace of isolated Fe3+ ions and finite clusters accommodates the cluster glass below T(g) = 10.6 K with field-induced m' symmetry and EH-type magnetoelectric response. Critical slowing-down, memory and rejuvenation after aging, occurrence of a de Almeida-Thouless phase line, and stretched exponential relaxation of remanence corroborate the glass nature.

Magnetoelectric switching of perpendicular exchange bias is observed in a Co∕Pt multilayer attached to single crystalline magnetoelectric antiferromagnetic Cr2O3(111). The exchange bias field HEB can be set to positive or negative values by applying an electric field Efr either parallel or antiparallel to the magnetic freezing field Hfr while cooling to below the Néel temperature. Based on this result, the antiferromagnetic spin state can be used as a medium for data storage. The authors propose magnetic random access memory cells and magnetic logic devices, which are purely voltage controlled.

Ferroelectric and ferromagnetic materials exhibit long-range order of atomic-scale electric or magnetic dipoles that can be switched by applying an appropriate electric or magnetic field, respectively. Both switching phenomena form the basis of non-volatile random access memory, but in the ferroelectric case, this involves destructive electrical reading and in the magnetic case, a high writing energy is required. In principle, low-power and high-density information storage that combines fast electrical writing and magnetic reading can be realized with magnetoelectric multiferroic materials. These materials not only simultaneously display ferroelectricity and ferromagnetism, but also enable magnetic moments to be induced by an external electric field, or electric polarization by a magnetic field. However, synthesizing bulk materials with both long-range orders at room temperature in a single crystalline structure is challenging because conventional ferroelectricity requires closed-shell d(0) or s(2) cations, whereas ferromagnetic order requires open-shell d(n) configurations with unpaired electrons. These opposing requirements pose considerable difficulties for atomic-scale design strategies such as magnetic ion substitution into ferroelectrics. One material that exhibits both ferroelectric and magnetic order is BiFeO3, but its cycloidal magnetic structure precludes bulk magnetization and linear magnetoelectric coupling. A solid solution of a ferroelectric and a spin-glass perovskite combines switchable polarization with glassy magnetization, although it lacks long-range magnetic order. Crystal engineering of a layered perovskite has recently resulted in room-temperature polar ferromagnets, but the electrical polarization has not been switchable. Here we combine ferroelectricity and ferromagnetism at room temperature in a bulk perovskite oxide, by constructing a percolating network of magnetic ions with strong superexchange interactions within a structural scaffold exhibiting polar lattice symmetries at a morphotropic phase boundary (the compositional boundary between two polar phases with different polarization directions, exemplified by the PbZrO3-PbTiO3 system) that both enhances polarization switching and permits canting of the ordered magnetic moments. We expect this strategy to allow the generation of a range of tunable multiferroic materials.

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