Magnetoelectric exchange bias systems in spintronics

Chen, Xi; Hochstrat, A.; Borisov, Pavel; Kleemann, W.

doi:10.1063/1.2388149

Cited by 174 publications

(129 citation statements)

References 18 publications

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“…In particular, it could remove the main hindrance in the miniaturization of magnetic random access memory (MRAM), where the write operation requires magnetic fields or large currents [26]. Another possibility is the development of memory bits with multiple stable states [27,28] or mixed memory and logic functions [29,30].…”

Section: Introductionmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

204

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: Introductionmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

204

144

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“…Chromium oxide (Cr 2 O 3 ) has been intensively studied during the last 10 years because it is possible to modulate the exchange bias effect in heterostructures using electric fields [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. In the antiferromagnetic (AF) state of Cr 2 O 3 , an applied electric field induces the magnetization, while an external magnetic field induces the dielectric polarization.…”

Section: Introductionmentioning

confidence: 99%

Magnetoelectric properties of 500-nmCr2O3films

et al. 2016

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The linear magnetoelectric effect was measured in 500-nm Cr 2 O 3 films grown by radio frequency sputtering on Al 2 O 3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an alternating current (ac) electric field and measuring the induced ac magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced ac magnetic moment on the ac electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the Néel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr 2 O 3 regarding the cooling field dependence of the magnetoelectric effect.

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“…Recently, the use of an electric ield (E-ield) to control the magnetic properties in multiferroic (MF) materials (converse magnetoelectric effect, CME [1]) rather than a magnetic ield generated by a current [2] or the current itself [3] has drawn intensive interest due to the important potential applications of these materials such as magnetoelectric random access memory (MERAM) devices [4][5][6][7] and magnetoelectric sensors [8,9]. Single phase MF materials are rare in nature [10] and almost all of them show only a weak magnetoelectric (ME) coupling below room temperature [1].…”

Section: Introductionmentioning

confidence: 99%

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

Yang¹,

Morley²,

Sharp³

et al. 2015

J. Phys. D: Appl. Phys.

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[13], Fe 3 O 4 /PZN-PT [14], NiFe 2 O 4 /(0 0 1) PMN-PT [15] and Ni/(1 1 0) PMN-PT [16]. Kim et al [17] studied the effects of the thickness and composition of the magnetic Co x Pd 1−x layer on the ME coupling strength. The ME constant (α) increased from 2 × 10 −7 s m −1 to 2.5 × 10 −7 s m −1 as the ilm thickness of Co 0.25 Pd 0.75 decreased from 30 nm to 10 nm. However, for both Co 0.22 Pd 0.0.78 and Co 0.18 Pd 0.0.82 compositions, α for the 10 nm thick magnetic ilm was lower than that for the 20 nm thick magnetic ilm due to the change of perpendicular magnetic anisotropy (PMA) at 10 nm. In addition, for ultrathin magnetic layers (<20 nm), the magnetostriction constant (λ) can be strongly inluenced by the thickness [18] according to the formula λ = λ b + λ i /t, where λ b is the magnetostriction of the bulk, λ i is the interfacial contribution and t is the magnetic layer thickness [19]. However, the effect of varying λ with t on ME coupling was not considered by Kim et al. AbstractCo 50 Fe 50 /(0 1 1)-oriented lead magnesium niobate-lead titanate (PMN-PT) multiferroic (MF) heterostructures were fabricated by RF sputtering magnetic ilms onto PMN-PT substrates. The effect of magnetic layer thickness (30 nm to 100 nm) on the magnetoelectric (ME) coupling in the heterostructures was studied independently, due to the almost constant magnetostriction constant (λ = 40 ± 5 ppm) and similar as-grown magnetic anisotropies for all studied magnetic layer thicknesses. A record high remanence ratio (M r /M s ) tunability of 95% has been demonstrated in the 65 nm Co 50 Fe 50 /PMN-PT heterostructure, corresponding to a large ME constant (α) of 2.5 × 10 −6 s m −1 , when an external electric ield (E-ield) of 9 kV cm −1 was applied. Such an MF heterostructure provides considerable opportunities for E-ield-controlled multifunctional devices.

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Magnetoelectric exchange bias systems in spintronics

Cited by 174 publications

References 18 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Magnetoelectric properties of 500-nmCr2O3films

Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure

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Magnetoelectric exchange bias systems in spintronics

Cited by 174 publications

References 18 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Magnetoelectric properties of 500-nmCr2O3films

Giant electric field tunable magnetic properties in a Co50Fe50/lead magnesium niobate–lead titanate multiferroic heterostructure

Contact Info

Product

Resources

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Giant electric field tunable magnetic properties in a Co₅₀Fe₅₀/lead magnesium niobate–lead titanate multiferroic heterostructure