Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 2: Simulation of Resist Developed Images at Electron and Ion Beam Lithography

Vutova, Katia; Koleva, Elena; Mladenov, G.

doi:10.5772/8184

Search citation statements

Order By: Relevance

Paper Sections

Select...

Sensitivity and Dissolution Rate Curves1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The contrast is also an important resist parameter and the contrast values for the investigated negative resists can be easily calculated using the curves presented in figure 1a by the following formula [14]:…”

Section: Sensitivity and Dissolution Rate Curvesmentioning

confidence: 99%

Study and comparison of resist characteristics for different negative tone electron beam resists

Andok

Vutova

Bencurova

et al. 2023

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

In this work, four types of negative electron beam resists are investigated. Electron beam lithography (EBL) experiments were conducted using EBL system ZBA23 (Raith) with the variable-shaped electron beam cross-section at 40 keV electron energy. Important electron beam resist characteristics such as sensitivity, dissolution rate, aspect ratio and sidewall developed profiles in the chemically amplified resist (CAR) SU-8 2000, non-CARs ma-N 2410 and ARN-7520, and inorganic negative resist HSQ XR-1514 are studied and compared. This study was motivated by the selection of a suitable resist for practical use such as large area gratings fabrication for optoelectronics.

show abstract

Section: Sensitivity and Dissolution Rate Curvesmentioning

confidence: 99%