Comparative study of I–V methods to extract Au/FePc/p-Si Schottky barrier diode parameters

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

“…Their analysis [44] requires two I − V curves at two different temperatures and determination of the minima in the modified Norde function. Still, the problem of the certain extraction of the minimum of the F (V ) function is existing [41,[48][49][50].…”

“…It has been purposed [41] the possibility of direct prediction of the series resistance from the current and conductance data. Although each models mentioned above has its own advantage according to other models, they have common limitations in the prediction of minimum points of the graphical and in their inappropriate methods, and/or they expose to a limitation that cannot be carried outa MIS or MOS [41,[48][49][50]. The inconvenience and uncertainties associated with the graphical method suggest that the model developed by Chattopadtyay et al [42] is a suitable one for determination of the R s from the forward I − V characteristics and high frequency forward C − V curves of nonideal MS contacts.…”

“…They [54] have made definition of the relative merit of the method by applying the method on some artificial I − V data sets corresponding to known R s values and comparing their own conclusions with the other methods. Recently, Oruç and Altındal [50] have applied Norde [43], Bohlin [45], Mikhelashvili [55], and Cheung [40] methods to I -V data to determine the main parameters of a SBD. They [50] have concluded that the determined parameters generally depend on the used model.…”

“…Recently, Oruç and Altındal [50] have applied Norde [43], Bohlin [45], Mikhelashvili [55], and Cheung [40] methods to I -V data to determine the main parameters of a SBD. They [50] have concluded that the determined parameters generally depend on the used model. They have indicated from the obtained results that directly used standard I − V method is especially limited by the R s value.…”

“…. [50] In this case, the population of the interface state density is governed entirely by the semiconductor but the interface states cannot follow an ac signal because the C − V measurements have been made at very high Figure 3, respectively. The Φ cv B = 0.78 eV is higher than the value of Φ IV B = 0.71 eV, as expected.…”