Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Abstract

It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization

“…The presence of the peaks highlights the existence of a particular distribution of the interface states or the CuNiCoS 4 layer [ 36 – 37 ]. The decrease of the capacitance values with increasing frequency can be attributed to interface states [ 38 – 39 ].…”

“…The presence of the peaks highlights the existence of a particular distribution of the interface states or the CuNiCoS 4 layer [36,37]. The decrease of the capacitance values with increasing frequency can be attributed to interface states [38,39]. The conductance-voltage (G-V) graphs of the Au/CuNiCoS 4 /p-Si photodiode for different frequencies are displayed in Figure 10.…”

Effect of Different Concentrations of Titanium Dioxide Nanoparticles on the Potential Barrier of Organic Device

“…Norde function interrelates function F (V) and the current I (V). The expression has been shown in the equation given below (4) and I (V) is the current, measured from I-V characteristics of the device where all symbols carry their usual meaning [33].…”

A review on electrical transport properties of thin film Schottky diode

“…When operated at different bias levels, the TFSD reveals two conduction mechanisms: thermionic emission (TE) and space charge limited conduction mechanisms (SCLC) [12]. Following TE theory [22], I can only flow if the carrier's energy exceeds the conduction band energy at the MS interface. It is agreed upon by equation ( 1) that I is dependent on 𝑉 [23,24],…”