Thickness-dependent physical properties of sputtered V2O5 films and Ti/V2O5/n-Si Schottky barrier diode

Kaya, Meltem Dönmez; Sertel, Buse Comert; Sönmez, Nihan Akın; Çakmak, M.; Özçelik, Süleyman

doi:10.1007/s00339-020-04023-1

Cited by 10 publications

(2 citation statements)

References 70 publications

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“…Additionally, the thickness of the interface layer used affects the electrical properties of the structure. 20,21 Reddy et al 21 examined the surface morphology and optical and electrical properties of Au/CuPc/n-Si heterojunctions with different thickness interface. They showed that the electrical properties of the Schottky structure can be altered by controlling the thickness of the interlayer.…”

Section: Device Fabricationmentioning

confidence: 99%

Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si

Yeşildağ

Erdoğan

Sevgili

et al. 2021

J. Electron. Mater.

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In the present study, 1,4-phenylenebis-1-(pyren-1-yl)methanimine derivative 3 (C 40 H 24 N 2 ) was synthesized in high yield by condensation reaction of pyrene-1-carbaldehyde (1) with benzene-1,4-diamine (2). The structures of the obtained organic compound 3 were determined by nuclear magnetic resonance (NMR), infrared (IR), and high-resolution mass spectrometry (HRMS) spectroscopic techniques. An Al/C 40 H 24 N 2 /p-Si device was then fabricated using this pyrene-imine-based organic material 3 at the interface. The organic layer was coated on p-Si by the spin coating method, and ohmic and rectifier contacts were deposited by thermal evaporation. Besides optical measurements, such as ultraviolet (UV) absorbance and NMR, the electrical and photovoltaic properties were investigated by current-voltage (I-V) measurements in the dark and under different illumination conditions and capacitance-conductance-voltage (C-G-V) measurements at various frequencies. The electrical parameters of the device, such as ideality factor, barrier height, and series resistance, were calculated using three methods: thermionic emission theory (TE), Cheung method, and Norde functions. Using the TE method, the ideality factor value of the six devices (D1 to D6) obtained by coating the C 40 H 24 N 2 organic layer between the metal and the semiconductor was 2.02 to 2.06, and the barrier height value increased by between 0.77 eV and 0.78 eV compared with the reference device. According to these results, the organic interface coated between the metal and semiconductor increased the barrier height and rectifying ratio of the device. In addition to its rectification feature, the Al/C 40 H 24 N 2 /p-Si/Al device showed photodiode characteristics. Although its solar cell parameters were low, these photodiode characteristics indicate that this device could be used in optoelectronic applications.

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Section: Device Fabricationmentioning

confidence: 99%

Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si

Yeşildağ

Erdoğan

Sevgili

et al. 2021

J. Electron. Mater.

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“…thin films [46,17]. The increase in the band gap with the decrease of film thickness is related to the decrease in grain size (confirmed by the AFM analysis) [47]. This finding can be attributed to the smaller localized state density in the band gap region.…”

Section: Resultsmentioning

confidence: 72%

Thickness Effect on Electro-Optical Characteristics of Mos2/P-Si Heterojunction Devices Fabricated by Aerosol Jet Printing

Kaya

Özçelik

2022

SSRN Journal

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Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer

Henry Thomas,

Ashok Kumar,

Kaleemulla

et al. 2024

J Mater Sci: Mater Electron

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Thickness-dependent physical properties of sputtered V2O5 films and Ti/V2O5/n-Si Schottky barrier diode

Cited by 10 publications

References 70 publications

Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si

Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si

Thickness Effect on Electro-Optical Characteristics of Mos2/P-Si Heterojunction Devices Fabricated by Aerosol Jet Printing

Electrical, structural, morphological and photovoltaic properties of Au/n-Ge heterojunctions using V2O5 interfacial layer

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