Optical and Electrical Properties of Pyrene–Imine Organic Interface Layer Based on p-Si

Abstract

In the present study, 1,4-phenylenebis-1-(pyren-1-yl)methanimine derivative 3 (C 40 H 24 N 2 ) was synthesized in high yield by condensation reaction of pyrene-1-carbaldehyde (1) with benzene-1,4-diamine (2). The structures of the obtained organic compound 3 were determined by nuclear magnetic resonance (NMR), infrared (IR), and high-resolution mass spectrometry (HRMS) spectroscopic techniques. An Al/C 40 H 24 N 2 /p-Si device was then fabricated using this pyrene-imine-based organic material 3 at the interface. The organic layer was coated on p-Si by the spin coating method, and ohmic and rectifier contacts were deposited by thermal evaporation. Besides optical measurements, such as ultraviolet (UV) absorbance and NMR, the electrical and photovoltaic properties were investigated by current-voltage (I-V) measurements in the dark and under different illumination conditions and capacitance-conductance-voltage (C-G-V) measurements at various frequencies. The electrical parameters of the device, such as ideality factor, barrier height, and series resistance, were calculated using three methods: thermionic emission theory (TE), Cheung method, and Norde functions. Using the TE method, the ideality factor value of the six devices (D1 to D6) obtained by coating the C 40 H 24 N 2 organic layer between the metal and the semiconductor was 2.02 to 2.06, and the barrier height value increased by between 0.77 eV and 0.78 eV compared with the reference device. According to these results, the organic interface coated between the metal and semiconductor increased the barrier height and rectifying ratio of the device. In addition to its rectification feature, the Al/C 40 H 24 N 2 /p-Si/Al device showed photodiode characteristics. Although its solar cell parameters were low, these photodiode characteristics indicate that this device could be used in optoelectronic applications.

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

“…As shown in Figure 12, the value of photosensitivity increases with illumination intensity in the measured whole reverse bias region, which is also evidence that the fabricated Au/(Er 2 O 3 :PVC)/n‐Si (MPS) SDs exhibit high photosensitivity in the negative/reverse bias region. Recently, similar results were reported in the literature for MPS type SDs 22,24,36–38 …”

“…Recently, similar results were reported in the literature for MPS type SDs. 22,24,[36][37][38] Table 3 shows the identically prepared silicon based on some PDs with an interfacial polymer layer in the literature and compares some main electrical parameters under illumination. As can be seen in Table 3, there is a good agreement between the electrical parameters such as n, BH, Rs, and S. The observed difference between them can be attributed to the thickness of the interfacial layer, its permittivity, barrier in-homogeneities between metal and semiconductor, a special density distribution of N ss in the bandgap of semiconductor, voltage dependence of them, and fabrication processes.…”

Dielectric Properties and Electrical Characteristics of a Triphenylamine Thin Film Deposited onto a Silicon Substrate via Spin Coating

“…These layers can be either organic or inorganic . The preference for semiconductors with organic layers is primarily driven by their cost-effectiveness, ease of application on large surfaces using various coating techniques, and high durability owing to their flexibility. − Leveraging these fundamental properties, organic semiconductors are extensively employed in electronic and optoelectronic domains, encompassing applications such as organic field-effect transistors, organic light-emitting diodes, solar cells, and Schottky structures. − Among the organic structures, triphenylamine (TPA; Figure ) stands out as particularly effective for surface coating in Schottky device designs …”