Comparative Study of gm/ID Methodology for Low-Power Applications

Krishnan, Namboodiri Akhil M. M.; Patel, Krishna S.; Jadhav, Manjunath

doi:10.1007/978-981-13-5802-9_83

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…Several approaches can be found in the literature reporting integrated LNA design methodologies, with different strategies regarding the parameters analyzed in the design process [7][8][9][10][11][12][13][14][15][16]. An even larger quantity of different configurations has been proposed for specific applications [17][18][19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

et al. 2020

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This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/ID ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.

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