Comparative study about Al-doped zinc oxide thin films deposited by Pulsed Electron Deposition and Radio Frequency Magnetron Sputtering as Transparent Conductive Oxide for Cu(In,Ga)Se 2 -based solar cells

Pattini, F.; Annoni, Filippo; Bissoli, F.; Bronzoni, Matteo; Garcia, John; Gilioli, E.; Rampino, Stefano

doi:10.1016/j.tsf.2014.11.071

Cited by 13 publications

(4 citation statements)

References 34 publications

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“…After the temperature of the deposition surface is raised to 250 °C the CIGS absorber is deposited up to a thickness of about 1.6 µ m, monitored by an IR pyrometer [15]. The solar cells are then completed with a 100 nm thick CdS buffer layer grown by chemical bath deposition followed by 50 nm of undoped ZnO and 250 nm of Al:ZnO both grown by RF-sputtering [28]. The solar cell devices defined as "standard cells" throughout the paper are grown on soda-lime glass sheets coated with a Si 3 N 4 blocking layer and a 0.5 µm thick Mo contact.…”

Section: Methodsmentioning

confidence: 99%

Progress on Low-Temperature Pulsed Electron Deposition of CuInGaSe2 Solar Cells

et al. 2016

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Abstract:The quest for single-stage deposition of CuInGaSe 2 (CIGS) is an open race to replace very effective but capital intensive thin film solar cell manufacturing processes like multiple-stage coevaporation or sputtering combined with high pressure selenisation treatments. In this paper the most recent achievements of Low Temperature Pulsed Electron Deposition (LTPED), a novel single stage deposition process by which CIGS can be deposited at 250˝C, are presented and discussed. We show that selenium loss during the film deposition is not a problem with LTPED as good crystalline films are formed very close to the melting temperature of selenium. The mechanism of formation of good ohmic contacts between CIGS and Mo in the absence of any MoSe 2 transition layers is also illustrated, followed by a brief summary of the measured characteristics of test solar cells grown by LTPED. The 17% efficiency target achieved by lab-scale CIGS devices without bandgap modulation, antireflection coating or K-doping is considered to be a crucial milestone along the path to the industrial scale-up of LTPED. The paper ends with a brief review of the open scientific and technological issues related to the scale-up and the possible future applications of the new technology.

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Section: Methodsmentioning

confidence: 99%

Progress on Low-Temperature Pulsed Electron Deposition of CuInGaSe2 Solar Cells

et al. 2016

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“…Besides, the PED method maintains the stoichiometry of the target materials in the deposited samples and thus permits the formation of high-quality samples. In the PED method, instead of photons, highly energetic electrons are focused on the target surface in order to ablate material having even large bandgap energy like SiO 2 [9][10][11]. Although a large number of studies had already been reported in the literature on the structural and physical properties of ZnO thin films, only few studies reported the deposition of the undoped ZnO thin film by PED method [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

The comparison of transient photocurrent spectroscopy measurements of Pulsed Electron Deposited ZnO thin film for air and vacuum ambient conditions

et al. 2019

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“…12 Highly promising optoelectronic properties aside, in terms of abundance and cost, zinc oxide-based alternatives are among the foremost potential replacement TCO materials. Dense thin lms of such materials can be deposited using a wide range of techniques including sputtering, 13 chemical vapour deposition, 14 pulsed electron deposition, 15 and pulsed laser deposition. 16 Some of these processes can require annealing steps in excess of 500 C in order to obtain optimal performance.…”

Section: Introductionmentioning

confidence: 99%