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Shockley Read Hall equation poses a limit to the maximum conversion efficiency of broadband solar radiation attainable by means of a single bandgap converter. A possible approach to overcome such a limit is to convert different parts of the broadband spectrum using different single junction converters. We consider here a different modus operandi where a single low-cost optimized plastic prismatic structure performs simultaneously the tasks of concentrating the solar light and, based on the dispersive behavior of the employed material, spatially splitting it into its spectral component. We discuss its approach, optical simulations, fabrication issues and preliminary experimental results demonstrating its feasibility for cost effective high efficiency Concentrated Photovoltaic Systems (CPV) systems.

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An approach to low-cost production of Cu(In,Ga)Se2 (CIGS) solar cells based on pulsed electron deposition (PED) has achieved a crucial milestone. Lab-scale solar cells with efficiencies exceeding 15% were obtained by depositing CIGS from a stoichiometric quaternary target at 270 °C and without any post-growth treatment. An effective control of the p-doping level in CIGS was achieved by starting the PED deposition with a layer of NaF tailored to generate the optimum Na diffusion. These results show that PED is a promising technology for the development of a competitive low-cost production process for CIGS solar cells.

We report on the high-pressure solid-state synthesis and the detailed structural characterization of the metastable, CuAu-type CuInS 2 (CA-CIS) phase. Although often present in CIS thin films as unwanted phase, it has been never synthesized in pure form, and its effect on the performance of CIS-based solar cells has been long debated. In this work, pure CA-CIS phase is synthesized in bulk polycrystalline form through a high-pressure−high-temperature solid-state reaction. Single-crystal X-rays diffraction reveals the formation of tetragonal CA-CIS (a = 3.9324(5), c = 5.4980(7) Å) either in cation-ordered and disordered phase, pointing out the role of the pressure/temperature increase on the Cu/In ordering. The resistivity measurements performed on CA-CIS show low resistivity and a flat trend vs temperature and, in the case of the ordered phase, highlight a bad-metallic behavior, probably due to a high level of doping. These findings clearly rule out the possibility of a beneficial effect of this phase on the CIS-based thin film solar cells.

We report a novel route for growing Cu(In,Ga)Se2 (CIGS) thin films, based upon the Pulsed Electron Deposition (PED) technique. Unlike other well‐known deposition techniques, PED process allows the stoichiometric deposition of CIGS layers in a single stage, without requiring any further treatments for Cu/(In + Ga) ratio adjustment nor selenization. The structural properties of polycrystalline CIGS films strongly depend on the growth temperature, whereas post‐deposition annealing enhances the grain size and the <112> out‐of‐plane preferred orientation of the chalcopyrite structure, without affecting the film composition. Preliminary measurements of the performances of solar cells based on these films confirm the great potentiality of PED‐grown CIGS as absorber layers. Copyright © 2011 John Wiley & Sons, Ltd.

Abstract:The quest for single-stage deposition of CuInGaSe 2 (CIGS) is an open race to replace very effective but capital intensive thin film solar cell manufacturing processes like multiple-stage coevaporation or sputtering combined with high pressure selenisation treatments. In this paper the most recent achievements of Low Temperature Pulsed Electron Deposition (LTPED), a novel single stage deposition process by which CIGS can be deposited at 250˝C, are presented and discussed. We show that selenium loss during the film deposition is not a problem with LTPED as good crystalline films are formed very close to the melting temperature of selenium. The mechanism of formation of good ohmic contacts between CIGS and Mo in the absence of any MoSe 2 transition layers is also illustrated, followed by a brief summary of the measured characteristics of test solar cells grown by LTPED. The 17% efficiency target achieved by lab-scale CIGS devices without bandgap modulation, antireflection coating or K-doping is considered to be a crucial milestone along the path to the industrial scale-up of LTPED. The paper ends with a brief review of the open scientific and technological issues related to the scale-up and the possible future applications of the new technology.