Comparative behavior and performances of MESFET and HEMT as a function of temperature

Gobert, Y.; Salmer, G.

doi:10.1109/16.275213

Cited by 19 publications

(6 citation statements)

References 15 publications

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“…Without the introduction of hydrogen gas, the output I -V characteristics at room temperature are almost similar to those at higher temperatures without the added hydrogen. The behaviour is in good agreement with the results reported by Gobert and Salmer [14]. In other words, the temperature effect for the MISFET studied is not obvious.…”

Section: Resultssupporting

confidence: 91%

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Lin

Cheng

et al. 2001

Semicond. Sci. Technol.

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A novel and high-performance Pd/oxide/GaAs hydrogen sensor based on a metal-insulator-semiconductor field-effect transistor (MISFET) is fabricated and studied. In the presence of the interfacial oxide, high sensitivity and significant increase in output drain current are observed. In the presence of hydrogen, a 2 × 200 µm 2 gate dimension device shows good dc characteristics including high turn-on voltage, an obvious variation of drain current and a short response time. In addition, under the applied voltage of −4 V and 537 ppm hydrogen in air, a very high sensitivity of 9473 is obtained. This performance shows that the device studied has a good potential for high-speed and high-sensitivity hydrogen sensor and MISFET integrated circuit applications.

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Section: Resultssupporting

confidence: 91%

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Lin

Cheng

et al. 2001

Semicond. Sci. Technol.

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“…The direct energy gap of In x Ga 1−x As may be obtained as [15] E g (In x Ga 1−x As) = 1.424 − 1.501x + 0.436x 2 (eV). (1) With an appropriate assumption of the conduction-band offset ( E C ) to valence-band discontinuity ( E V ) ratio, i.e., E C / E V = 6:4, the values of E C and E V between the step-compositioned In x Ga 1−x As channel are around 60 and 40 meV, respectively. As shown in figure 2, the bandgap of the Ga 0.51 In 0.49 P Schottky layer (∼1.92 eV) and the reliable E C at the In 0.49 Ga 0.51 P/In 0.1 Ga 0.9 As heterointerface (∼0.275 eV) can effectively confine electrons in the In x Ga 1−x As channel.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, high electron mobility transistors (HEMTs) have emerged as the most promising device to develop the high-power and high-frequency microwave systems for the applications on personal digital cellular (PDC), satellite broadcasting, microwave communication and radar. Better dc and RF characteristics than metal-semiconductor fieldeffect transistors (MESFETs) have been reported [1][2][3]. In fact, a very high transconductance and a high unit currentgain cut-off frequency (f T ) were achieved by AlGaAs/GaAs and InAlAs/InGaAs HEMTs [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

Yen¹,

Chang²,

Yu³

et al. 2000

Semicond. Sci. Technol.

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A newly designed high-barrier-gate Ga 0.51 In 0.49 P/In x Ga 1−x As/GaAs pseudomorphic transistor with a step-compositioned channel (SC 2 ) and bottomside delta-doped sheet (BD 2 S) structure has been fabricated successfully and studied. For a 1 × 100 µm 2 studied device, a high gate-to-drain breakdown voltage over 30 V is found. In addition, an available output current density up to 826 mA mm −1 at a high gate voltage of 2.5 V, a maximum transconductance of 201 mS mm −1 with a very broad transconductance operation regime of 3 V of gate bias (565 mA mm −1 of drain current density) and a high dc gain ratio of 575 are obtained, simultaneously. Meanwhile, the maximum values of the unity current-gain cut-off frequency f T and oscillation frequency f max are 16 and 34 GHz, respectively.

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“…Modulation doped field effect transistors (MODFETs) provide many superior characteristics over other field effect transistors (FETs) (metal oxide semiconductor FET (MOSFETs) and metal semiconductor FET (MESFETs)) [1] especially in the areas of monolithic microwave integrated circuits (MMICs). These devices are characterized by the presence of a two-dimensional electron gas (2DEG) at the hetero-interface which provides the path for current conduction [2].…”

Section: Introductionmentioning

confidence: 99%

Temperature and aluminium composition dependent sheet carrier concentration at AlGaAs/GaAs interface

Sen

Pandey

Haldar

et al. 1999

J. Phys. D: Appl. Phys.

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The sheet carrier concentration (two-dimensional electron gas (2DEG), at the AlGaAs/GaAs interface is analytically modelled with its dependence on temperature (from liquid nitrogen temperature to room temperature and higher) and aluminium composition, at equilibrium and for charge control by the gate. The effect of deep-donor concentration is also taken into account and a decrease in the 2DEG is observed at higher concentrations of deep donors and at higher temperatures. The theoretical analysis, based on Fermi-Dirac statistics, shows that the thermal characterization of the 2DEG is essential. The results obtained are compared with experimental data.

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Comparative behavior and performances of MESFET and HEMT as a function of temperature

Cited by 19 publications

References 15 publications

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

Temperature and aluminium composition dependent sheet carrier concentration at AlGaAs/GaAs interface

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