Recent creation of a Unified Microbiome Initiative (UMI) has the aim of understanding how microbes interact with each other and with us. When pathogenic Staphylococcus aureus (S. aureus) infects the skin, the interplay between S. aureus and skin commensal bacteria occurs. Our previous data revealed that skin commensal bacteria can mediate fermentation against the growth of USA300, a community-acquired methicillin-resistant S. aureus MRSA (CA-MRSA). By using a fermentation process with solid media on a small scale, we define poly(ethylene glycol) dimethacrylate (PEG-DMA) as a selective fermentation initiator (SFI) which can specifically intensify the probiotic ability of skin commensal Staphylococcus epidermidis (S. epidermidis) bacteria. At least five SCFAs including acetic, butyric and propionic acids with anti-USA300 activities were produced by PEG-DMA fermentation of S. epidermidis. Furthermore, the S. epidermidis-laden PEG-DMA hydrogels effectively decolonized USA300 in skin wounds in mice. The PEG-DMA and its derivatives may become novel biomaterials to specifically tailor the human skin microbiome against invading pathogens.
The RSA public-key cryptosystem is an algorithm that converts input data to an unrecognizable encryption and converts the unrecognizable data back into its original decryption form. The security of the RSA public-key cryptosystem is based on the difficulty of factoring the product of two large prime numbers. This paper demonstrates to factor the product of two large prime numbers, and is a breakthrough in basic biological operations using a molecular computer. In order to achieve this, we propose three DNA-based algorithms for parallel subtractor, parallel comparator, and parallel modular arithmetic that formally verify our designed molecular solutions for factoring the product of two large prime numbers. Furthermore, this work indicates that the cryptosystems using public-key are perhaps insecure and also presents clear evidence of the ability of molecular computing to perform complicated mathematical operations.
This paper reports on self-aligned T-gateInGaP/GaAs FET's using n + + + /N + + + = = =(P + + + )/n structures. N + + + -
InGaP/(P + + + )-InGaP/n-GaAs forms a planar-doped barrier. The inherent ohmic gate of camel-gate FET's together with a highly selective etch between an InGaP and a GaAs layers offers a self-aligned T-shape gate with a reduced effective length. A fabricated device with a reduced gate dimension of 1.5 2 2 2 100 (0.6 2 2 2 100) m 2 obtained from 2 2 2 2 100 (1 2 2 2 100) m 2 gate metal exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.
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