Study of a high-barrier-gate pseudomorphic transistor with a step-compositioned channel and bottomside delta-doped sheet structure

Abstract

A newly designed high-barrier-gate Ga 0.51 In 0.49 P/In x Ga 1−x As/GaAs pseudomorphic transistor with a step-compositioned channel (SC 2 ) and bottomside delta-doped sheet (BD 2 S) structure has been fabricated successfully and studied. For a 1 × 100 µm 2 studied device, a high gate-to-drain breakdown voltage over 30 V is found. In addition, an available output current density up to 826 mA mm −1 at a high gate voltage of 2.5 V, a maximum transconductance of 201 mS mm −1 with a very broad transconductance operation regime of 3 V of gate bias (565 mA mm −1 of drain current density) and a high dc gain ratio of 575 are obtained, simultaneously. Meanwhile, the maximum values of the unity current-gain cut-off frequency f T and oscillation frequency f max are 16 and 34 GHz, respectively.

Synthesis and Characterization of ZnS nanoparticle doped Eu 3+ ions prepared by sol-gel method in silica glass matrix

“…Additionally, various symmetry sites result in quite different luminescent intensities for the Eu 3+ ion [23]. The on-going luminescence studies of Eu 3+ ions on various host, for instance Al: Eu 3+ [21,22], CdS: Eu 3+ [23], ZrO2: Eu 3+ [24], LaAlGe2O7: Eu 3+ [25], Sn02: Eu 3+ [26], ZnO: Eu 3+ [27], TiO2: Eu 3+ [28] enhancing knowledge on Eu 3+ ions for photonic applications. However, there have been few works on Eu 3+ ions doped with ZnS nanoparticles in silica glass [29][30][31][32][33][34][35].…”