Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Abstract

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. J. Low PowerElectron. Appl. 2014, 4 2

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

“…Bocquet bipolar model [148] describes the bipolar oxide-based resistive switching memories utilizing a physics-based modeling approach. Bocquet bipolar model describes the electroforming process of RRAM device, inaddition to utilizing some of the characteristics from Bocquet unipolar model [149] and modifies them significantly according to the bipolar switching characteristics.…”

“…To model the electroforming stage, Bocquet bipolar model utilizes electroforming rate (τ Form ) which details the mechanism of conversion to switchable sub-oxide from pristine oxide. The electroforming stage is modeled as [148]:…”

“…The electrochemical redox reaction derived from Butler-Volmer equation [150] is used to describe the SET/RESET operation as [148]:…”

“…The total current flowing in OxRRAM is the sum of currents flowing in the conductive area (I CF ), the conduction through switchable sub-oxide (I sub−oxide ) and conduction through unswitched pristine oxide (I pristine ). The total current is as [148]:…”

Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories

“…The model enables continuously accounting for both SET and RESET operations into a single master equation in which the resistance is controlled by the radius of the conduction pathways (r CF ) [12]: Where β RedOx is the nominal oxide reduction rate, E a is the activation energy, α red and α ox are the transfer coefficients (ranging between 0 and 1 and representing the pathways creation/destruction dynamic), k b is the Boltzmann constant, r CFmax is the maximal size of the conductive filament radius, T is the temperature and V cell the voltage across the cell. Moreover, the model makes assumptions of a uniform radius of the conduction pathways, a uniform electric field in the cell and temperature triggered acceleration of the oxide reduction reactions ("redox").…”