$${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

Villena, Marco A.; Roldán, J.B.; Jiménez-Molinos, F.; Miranda, E.; Suñé, J.; Lanza, Mario

doi:10.1007/s10825-017-1074-8

Cited by 46 publications

(53 citation statements)

References 212 publications

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“…[209] Density gradient induced diffusions and electric field driven drifts control the ionic migrations occurring by hopping across energy barriers determined by ab initio methods. [209] Density gradient induced diffusions and electric field driven drifts control the ionic migrations occurring by hopping across energy barriers determined by ab initio methods.…”

Section: Kmc/fem Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

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496

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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Section: Kmc/fem Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

Self Cite

496

434

View full text Add to dashboard Cite

show abstract

“…RRAMs will be a key technology for future non-volatile memory circuits [1][2][3][4][5][6][7] . Applications of RS devices can also be found in the neuromorphic and hardware security circuit realms 5,8,9 .…”

Section: Introductionmentioning

confidence: 99%

“…Filamentary conduction through CFs is the most common operation mechanism: it is based on the stochastic formation and destruction processes of ohmic conductive filaments that shunt the electrodes 1,2,5,6,7,11,12,13,14,15 . These processes are linked to localized high temperature regions (generated by Joule heating) in which thermally based mechanisms are triggered 11,16,17 .…”

Section: Introductionmentioning

confidence: 99%

Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

Cazorla

Aldana

Maestro

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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An in-depth analysis including both simulation and experimental characterization of Resistive RAMs (RRAMs) with dielectric stacks composed of two layers of HfO2 and Al2O3 stacked in different order is presented. The simulator, that includes the electrodes in the simulation domain, solves the 3D heat equation and calculates the device current. The results are employed to analyze thermal effects in bilayer HfO2 and Al2O3-based RRAMs with electrodes of Ni and Si-n+ during resistive switching (RS) operation. According to our simulations and the experimental data, the narrow part of the conductive filaments (CF) is formed in the HfO2 layer in all the cases and, therefore, no important differences are found in terms of reset voltage if the oxide stack order is changed with respect to the electrodes. This result is attributed to the fact that the heat flux in the Al2O3 is higher than

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“…The next-generation of non-volatile memory technologies is getting wide attention among electronics manufacturers and the scientific community. The expected high-performance and cost-effective features of these emerging non-volatile memories will simplify memory hierarchy and incorporate non-volatility in logic circuits [1][2][3][4][5][6][7] . In addition, they will open paths for novel applications in neuromorphic computing and hardware security landscapes 3,8,9 .…”

Section: Introductionmentioning

confidence: 99%

New method to analyze random telegraph signals in resistive random access memories

González-Cordero

González

Jiménez-Molinos

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A new technique to analyze Random Telegraph Noise (RTN) is proposed. It has been used for the analysis of current versus time measurements performed on Ni/HfO2/Si-n+-based 2 resistive random access memories (RRAMs). The method allows to study current-time traces with a massive number of data without losing the capability of dealing with background noise and discriminating the active defects responsible for current fluctuations. A comparison of this algorithm with previous ones is given in terms of computing time and RTN description accuracy. The computing efficiency and the validity of the model have been proved and, therefore, it is feasible to propose applications for real time analysis making use of this new algorithm.

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$${ SIM}^2{ RRAM}$$ S I M 2 R R A M : a physical model for RRAM devices simulation

Cited by 46 publications

References 212 publications

Recommended Methods to Study Resistive Switching Devices

Recommended Methods to Study Resistive Switching Devices

Thermal study of multilayer resistive random access memories based on HfO2 and Al2O3 oxides

New method to analyze random telegraph signals in resistive random access memories

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