Compact epsilon-near-zero silicon photonic phase modulators

Reines, Isak C.; Wood, Michael G.; Luk, Ting S.; Serkland, Darwin K.; Campione, Salvatore

doi:10.1364/oe.26.021594

Cited by 35 publications

(17 citation statements)

References 28 publications

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“…These oxides are an alternative to the classical plasmon materials, such as silver and gold [24][25][26][27][28][29]. They are attractive due to the possibility of implementing the high nonlinearity [30][31][32], designing modulators [33] and polarization devices [34], bending the wave front [35] and creating absorbers [36] and insulators [37]. All this was obtained due to the unique dispersion properties of the TCOs in the epsilon-near-zero wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons

2019

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We demonstrated the possibility of using transparent conducting oxides (AZO, GZO, ITO) to form Tamm plasmon polaritons in the near-infrared spectral range where the permitivity of oxides is near-zero. The spectral properties of the structures have been investigated in the framework of the temporal coupled mode theory and confirmed by transfer matrix method. It was found that in the critical coupling conditions the maximal Q-factor of a Tamm plasmon polariton is achieved when photonic crystal is conjugated with the AZO film, while at the conjugation with the ITO films the broadest spectral line is obtained. The sensitivity of the wavelength and spectral width of the Tamm plasmon polariton to changes of the oxide film thickness, the bulk concentration of a dopand and the angle of incidence are demonstrated.

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Section: Introductionmentioning

confidence: 99%

Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons

2019

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“…This indicates that the epsilon-near-zero point can be chosen when we change the operating wavelength and the initial electron concentration. We can thus adjust the deposition conditions to shift the operating wavelengths of ITO for specific applications [29].…”

Section: Device Structure and Principlementioning

confidence: 99%

A Dual-Slot Electro-Optic Modulator Based on an Epsilon-Near-Zero Oxide

et al. 2019

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A dual-slot silicon electro-optic modulator based on indium tin oxide is proposed with high modulation efficiency, low loss, and broadband operation leveraging the epsilon-near-zero (ENZ) effect. The design is verified by numerical simulation with Lumerical Solutions. The active modulation region consists of two slots for enhancing the overlap between the optical mode and the ENZ region to improve the performance of the electroabsorption modulator. By combining the confinement of the dual-slot waveguide and the ENZ effect, we can obtain a high modulation efficiency of 1.44 dB/μm at the wavelength of 1.55 μm. The modulator with a modulation region length of only 10 μm demonstrates a low insertion loss and a high extinction ratio, with the corresponding values of 0.37 and 14.4 dB, respectively. Through the optimized design, the efficient coupling can be achieved between the silicon waveguide and the dual-slot waveguide with the coupling loss of only 0.12 dB. Moreover, the modulator can operate in a wide spectrum, covering the S-, C-, and L-band. The dual-slot electro-optic modulator thus provides various merits including high modulation efficiency, ultracompact footprint, broad optical bandwidth, and complementary metal-oxide-semiconductor compatibility.

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“…This limits the integration density and increases the overall cost. To resolve this issue, a variety of CMOS-compatible materials such as vanadium dioxide (VO2) 6 , barium titanate (BTO) 7 , germanium antimony telluride (GST) 8 , and indium-tin-oxide (ITO) [9][10][11][12][13][14][15][16][17][18][19][20] , have been studied as the active material of optical modulators. Among these materials, ITO has drawn considerable attention because of its fast and widely tunable FCD effect and epsilon near zero (ENZ) property 10 .…”

Section: Introductionmentioning

confidence: 99%

Efficient binary and QAM optical modulation in ultra-compact MZI structures utilizing indium-tin-oxide

Mohammadi-Pouyan

Miri

Sheikhi

2022

Preprint

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A design for a CMOS-compatible active waveguide is proposed in which the epsilon-near-zero (ENZ) property of the Indium-tin-oxide (ITO) is used to induce large variations in the real and imaginary parts of the waveguide effective index. The proposed waveguide comprises a TiN/HfO2/ITO metal-oxide-semiconductor (MOS) structure where the speed and power consumption are significantly reduced by the application of the TiN and realization of double accumulation layers in the ITO. Simulations show the insertion loss (IL) of 0.38dB/µm, extinction ratio (ER) of 11dB/µm, the energy consumption of 11.87fJ/bit and electrical bandwidth of 280GHz when the designed waveguide is used as an electro-absorption modulator. The waveguide is then used in an MZI structure to design binary and quadrature-amplitude-modulator (QAM) modulators. For binary modulator, the IL, ER, and VπLπ figures of merit are found to be 1.24dB, 54dB, and 6.4V.µm, respectively, which show substantial improvement over previous ITO-based designs. In the QAM design, the symmetry in the real and imaginary parts of the waveguide effective index is employed to obviate the need for additional phase shift elements. This considerably reduces the overall length of the proposed QAM modulator and improves efficiency. Simulations show the energy consumption and bit rate, of 2fJ/bit and 560Gbps, respectively in a 4-QAM modulator with the overall length of 6.2µm. The symmetry properties of the proposed waveguide can be further exploited to realize quadrature-phase-shift-keying (QPSK) modulators which here is used in combination with the 4-QAM to propose a design for the more advanced modulation scheme of 16-QAM. The design of ITO-based QAM modulators is here reported for the first time and the abovementioned performance parameters show the unique properties of these modulators in terms of footprint, energy consumption and modulation-speed.

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Compact epsilon-near-zero silicon photonic phase modulators

Cited by 35 publications

References 28 publications

Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons

Transparent conductive oxides for the epsilon-near-zero Tamm plasmon polaritons

A Dual-Slot Electro-Optic Modulator Based on an Epsilon-Near-Zero Oxide

Efficient binary and QAM optical modulation in ultra-compact MZI structures utilizing indium-tin-oxide

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