Abstract:A design for a CMOS-compatible active waveguide is proposed in which the epsilon-near-zero (ENZ) property of the Indium-tin-oxide (ITO) is used to induce large variations in the real and imaginary parts of the waveguide effective index. The proposed waveguide comprises a TiN/HfO2/ITO metal-oxide-semiconductor (MOS) structure where the speed and power consumption are significantly reduced by the application of the TiN and realization of double accumulation layers in the ITO. Simulations show the insertion loss … Show more
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