Compact and Low Power DP-QPSK Modulator Module with InP-Based Modulator and Driver ICs

Kono, Naoya; Kitamura, Takehiko; Yagi, Hideki; Itabashi, Naoki; Tatsumi, Taizo; Yamauchi, Y.; Fujii, Keiji; Horino, Kazuhiko; Yamanaka, S.; Tanaka, Keiji; Yamaji, Katsuhiko; Fukuda, Chie; Hirano, Shoji

doi:10.1364/ofc.2013.ow1g.2

Cited by 15 publications

(2 citation statements)

References 3 publications

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“…Although an MZM requires a higher modulation voltage and has a larger chip size than an EA-DFB laser, it can generate an optical phase-shift-keying (PSK) signal as a QPSK and a QAM. The 25-and 40-Gbaud operation of MZM modules has been reported [8], [9]. In these reported modules, a conventional wire interconnection technique was employed to connect between a chip and a radio frequency (RF) circuit board and between a chip and a terminator.…”

Section: Introductionmentioning

confidence: 99%

High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices

Kanazawa

Yamazaki

Ueda

et al. 2019

IEICE Trans. Electron.

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We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10 −3 , which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM subassembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.

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Section: Introductionmentioning

confidence: 99%

High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices

Kanazawa

Yamazaki

Ueda

et al. 2019

IEICE Trans. Electron.

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“…InP-based modulators/demodulators have recently attracted a lot of attention as a digital coherent technology because of their small chip size, low driving voltage, and potential for monolithic integration with semiconductor active devices such as laser/photo-diodes [1][2][3][4]. Although polarization-division multiplexing (PDM) is mainly used as a method for doubling transmission capacity, the monolithic integration of PDM components such as a polarization beam splitter/combiner (PBS/PBC) with InP-based modulators/demodulators has been little reported [4].…”

Section: Introductionmentioning

confidence: 99%

Novel adjustment structure and method for InP-based Mach-Zehnder interferometer polarization splitter

Watanabe

Nasu

Ohiso

et al. 2015

2015 20th Microoptics Conference (MOC)

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A 3-Vppd 730-mW Linear Driver IC Using InP HBTs for Advanced Optical Modulations

Nagatani

Bouvier

Nosaka

et al. 2013

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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Compact and Low Power DP-QPSK Modulator Module with InP-Based Modulator and Driver ICs

Cited by 15 publications

References 3 publications

High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices

High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices

Novel adjustment structure and method for InP-based Mach-Zehnder interferometer polarization splitter

A 3-Vppd 730-mW Linear Driver IC Using InP HBTs for Advanced Optical Modulations

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