A 3-Vppd 730-mW Linear Driver IC Using InP HBTs for Advanced Optical Modulations

Nagatani, Munehiko; Bouvier, Y.; Nosaka, Hideyuki; Murata, Koichi

doi:10.1109/csics.2013.6659193

Cited by 13 publications

(2 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To reduce the module size, we designed the two-channel driver IC with a fully lumped configuration to save active IC area [8]. The driver IC has a fully differential two-stage amplifier comprising a variable-gain amplifier (VGA) and an output buffer (Obuf ) as shown in Fig.…”

Section: Driver Modulementioning

confidence: 99%

28 Gbaud 16-QAM modulation with compact driver module for InP MZM

Wakita

Nagatani

Kanazawa

et al. 2015

IEICE Electron. Express

Self Cite

View full text Add to dashboard Cite

This paper presents a compact driver module for InP MachZehnder modulator (MZM). The size of the driver module is 14 mm × 8 mm × 2.8 mm. We reduce the size of this driver module by integrating two channels for the driver IC, which doesn't require any external bias tee, and by making the driver package small. With this driver module and InP MZM module mounted on evaluation board, we obtained a well separated 16-QAM constellation at the speed of 28 Gbaud.

show abstract

Section: Driver Modulementioning

confidence: 99%

28 Gbaud 16-QAM modulation with compact driver module for InP MZM

Wakita

Nagatani

Kanazawa

et al. 2015

IEICE Electron. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…Their high-speed performance makes them promising candidates for fabricating over-100-Gbit/s ICs for optical fiber communications systems [4], [5]. In the last several years, there have been rapid advances in their high-frequency performance through aggressive lateral scaling, such as a narrowing of the emitter and emitter-base (EB) spacing [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Over 450-GHz ft and fmax InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO2 Sidewall Spacers

Kashio

Kurishima

Ida

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

This paper describes InP/InGaAs double heterojunction bipolar transistor (HBT) technology that uses SiN/SiO 2 sidewall spacers. This technology enables the formation of ledge passivation and narrow base metals by i-line lithography. With this process, HBTs with various emitter sizes and emitterbase (EB) spacings can be fabricated on the same wafer. The impact of the emitter size and EB spacing on the current gain and high-frequency characteristics is investigated. The reduction of the current gain is <5% even though the emitter width decreases from 0.5 to 0.25 µm. A high current gain of over 40 is maintained even for a 0.25-µm emitter HBT. The HBTs with emitter widths ranging from 0.25 to 0.5 µm also provide peak f t of over 430 GHz. On the other hand, peak f max greatly increases from 330 to 464 GHz with decreasing emitter width from 0.5 to 0.25 µm. These results indicate that the 0.25-µm emitter HBT with the ledge passivaiton exhibits balanced highfrequency performance (f t = 452 GHz and f max = 464 GHz), while maintaining a current gain of over 40.

show abstract

High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators

Lopez

Rito

Mičušík

et al. 2015

Analog Integr Circ Sig Process

View full text Add to dashboard Cite

A hybrid arrangement for an optical transmitter sub-system comprising a linear driver fabricated in IHP SiGe 0.13 A mu m BiCMOS technology with an InP segmented Mach-Zehnder modulator is described. The proposed scheme, with direct interface to the digital to analog converter, is suitable for coherent high order modulation formats intended for data transmission over optical fiber at a wavelength of 1550 nm. In this paper, a partial prototype, consisting of a single driver core and modulator segment is demonstrated. The driver core features an output differential voltage of 2.5 Vpp, a gain of 9 dB and a 3 dB bandwidth of 32 GHz. Linearity is evaluated through total harmonic distortion measurements. With on-off-keying modulation, electro-optical eye diagram measurements of the single segment demonstrate successful operation up to 40 Gb/s data rate. While exhibiting clear capability for high speed operation, these results serve also to explore the boundaries of the proposed hybrid configuration

show abstract

A 3-Vppd 730-mW Linear Driver IC Using InP HBTs for Advanced Optical Modulations

Cited by 13 publications

References 8 publications

28 Gbaud 16-QAM modulation with compact driver module for InP MZM

28 Gbaud 16-QAM modulation with compact driver module for InP MZM

Over 450-GHz f<sub>t</sub> and f<sub>max</sub> InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO<sub>2</sub> Sidewall Spacers

High speed BiCMOS linear driver core for segmented InP Mach-Zehnder modulators

Contact Info

Product

Resources

About