y4Wracf-"Partial power processing" refers to some nonisolated architectures that process less power than the nominal power delivered to the load. However, they process the same or higher indirect power than the basic step-down (buck) or step-up (boost) cells. Instead of using the sum of the nominal power (P^t) of each building block to compare different architectures, indirect power (P(nd) is a better metric, because there is an amount of direct power (Pdir) transferred to the load that does not add volume nor losses to the components of the circuit. The fundamental minimum possible amount of P^ for a power supply system specification is termed as differential power (Pd¿//).In this paper, a high level methodology based on Continuous Power Models (CPMs) and VA interpretation is used to calculate the amount of power processed by the "Partial Power Architectures" (PPAs), and it is found that at architecture level they have the same Pd¿// as the basic non-isolated conversion cells, so it is basically a different interpretation of the ports. The basic non-isolated conversion cells, e.g., buck for step-down and boost for step-up, intrinsically have partial power processing. Nevertheless, "partial power architectures" are useful to analyze, compare and synthesize the power converters that process Pd¿// by inductive, capacitive, resonant or auto-transformer mechanism. fgwon&-pardo* power processing, <&0ereMfW power, camfBHMM» power mode/, K4 area mferprefaüom, /wgA feW compafMOM, AanAiwe ófpgcf/acfor, 6w&recfpower

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Abstract-In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular application, which in our case is a high frequency DC DC converter for Envelope Tracking and Envelope Elimination and Restoration techniques. In this work, extrinsic models for output characteristics together with input, output and reverse capacitance of a depletion mode GaN HEMT with a field plate structure were obtained. The obtained physical model was implemented in a Simplorer simulation model of a high frequency buck converter and verified by the prototype that employed modeled GaN HEMT, operating at 7, 15 and 20MHz of switching frequency. Comparing to the measured efficiency curves, simulation results showed good agreement, especially in the low power range at high switching frequency, which are the operating conditions in our application.

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