Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

Fujioka, Nobuhide; Chu, Tao; Ishizaka, Masashige

doi:10.1109/jlt.2010.2073445

Cited by 52 publications

(34 citation statements)

References 14 publications

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“…Silicon-based optical devices have received a great deal of attention for potential application to high speed signal processing and on-chip communications [1][2][3][4][5][6][7]. Nonlinear optical properties of silicon were originally studied by Soref et al [8], and have been subsequently characterized with various different techniques that have resulted in a large range of published data [9].…”

Section: Introductionmentioning

confidence: 99%

“…For increasingly higher bit-rate optical signals, shorter pulses need to be transmitted in silicon waveguides while keeping the per-pulse energy of the optical signals constant. This leads to pulses with high peak powers which combined with the small feature sizes of devices can lead to intensities in the order of MW/cm 2 . At such intensities, the nonlinear optical properties of silicon begin to impose limitations on the maximum data rate that can be carried by such devices.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast nonlinear optical studies of silicon nanowaveguides

Motamedi¹,

Khilo²,

Kärtner³

et al. 2012

Opt. Express

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Abstract:Results of a self-consistent ultrafast study of nonlinear optical properties of silicon nanowaveguides using heterodyne pump-probe technique are reported. The two-photon absorption coefficient and freecarrier absorption effective cross-section were determined to be 0.68cm/GW, and 1.9x10 −17 cm 2 , respectively and the Kerr coefficient and free-carrier-induced refractive index change 0.32x10 −13 cm 2 /W, and −5.5x10 −21 cm 3 , respectively. The effects of the proton bombardment on the linear loss and the carrier lifetime of the devices were also studied. Carrier lifetime reduction from 330ps to 33ps with a linear loss of only 14.8dB/cm was achieved using a proton bombardment level of 10 15 /cm 2 . ©2012 Optical Society of America

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrafast nonlinear optical studies of silicon nanowaveguides

Motamedi¹,

Khilo²,

Kärtner³

et al. 2012

Opt. Express

View full text Add to dashboard Cite

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“…(1) silicon material engineering by introducing emissive centers to assist the efficient light emission (Pavesi et al, 2000;Han et al, 2001;Rotem et al, 2007a,b;Shainline and Xu, 2007), (2) strained Ge (Liu et al, 2007(Liu et al, , 2009Cheng et al, 2009;Sun et al, 2009b,c;Camacho-Aguilera et al, 2012), (3) silicon Raman laser Jalali, 2004, 2005;Rong et al, 2005aRong et al, ,b, 2007, and (4) heterogeneous integration of III/V gain materials through packaging (Chu et al, 2009;Fujioka et al, 2010;Urino et al, 2011) or wafer bonding (Park et al, 2005;Fang et al, 2007a,b;Liang et al, 2009aLiang et al, ,b, 2010Stanković et al, 2010;Grenouillet et al, 2012). …”

Section: Review On Research For Lasers On Siliconmentioning

confidence: 99%

High-Throughput Multiple Dies-to-Wafer Bonding Technology and III/V-on-Si Hybrid Lasers for Heterogeneous Integration of Optoelectronic Integrated Circuits

et al. 2015

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Integrated optical light source on silicon is one of the key building blocks for optical interconnect technology. Great research efforts have been devoting worldwide to explore various approaches to integrate optical light source onto the silicon substrate. The achievements so far include the successful demonstration of III/V-on-Si hybrid lasers through III/V gain material to silicon wafer bonding technology. However, for potential large-scale integration, leveraging on mature silicon complementary metal oxide semiconductor (CMOS) fabrication technology and infrastructure, more effective bonding scheme with high bonding yield is in great demand considering manufacturing needs. In this paper, we propose and demonstrate a high-throughput multiple dies-to-wafer (D2W) bonding technology, which is then applied for the demonstration of hybrid silicon lasers. By temporarily bonding III/V dies to a handle silicon wafer for simultaneous batch processing, it is expected to bond unlimited III/V dies to silicon device wafer with high yield. As proof-of-concept, more than 100 III/V dies bonding to 200 mm silicon wafer is demonstrated. The high performance of the bonding interface is examined with various characterization techniques. Repeatable demonstrations of 16-III/V die bonding to pre-patterned 200 mm silicon wafers have been performed for various hybrid silicon lasers, in which device library including Fabry-Perot (FP) laser, lateralcoupled distributed-feedback laser with side wall grating, and mode-locked laser (MLL). From these results, the presented multiple D2W bonding technology can be a key enabler toward the large-scale heterogeneous integration of optoelectronic integrated circuits.

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“…Shown in Fig. 2b), NEC has taken the approach of simplifying the required III-V semiconductor block further, with only the gain block being fabricated in InP-based material and the ring resonator tuning elements realized in a silicon photonics platform [11]. Heating of the rings induces a thermo-optic effect which shifts the wavelength peak of the rings.…”

Section: Colorless Onumentioning

confidence: 99%

“…2: a) Double-ring-resonator coupled tunable laser (courtesy of [10]). b) Tunable laser with silicon photonic micro-ring resonators (courtesy of [11]). …”

Section: Colorless Onumentioning

confidence: 99%