Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]

Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)]

“…This response complements the pertinent comment by Hsu et al 3 reinforcing the HG-EHBTFET reliability at low drain voltages and provides an explanation for the observed behavior of the eigenenergy difference between the first bound states for electrons in the overlap and underlap regions when increasing / tg2 . FIG.…”

“…1(b) in Ref. 3) that there exists an optimized value of / tg2 for which DE turns out to be approximately independent of V D . Our response seeks to explain the interesting behavior of the DEðV D Þ curves depicted in Fig.…”

“…Our response seeks to explain the interesting behavior of the DEðV D Þ curves depicted in Fig. 1(b) of the comment by Hsu et al 3 for better understanding of the effect that heterogate configuration has on the performance of these devices. The results herein presented were obtained employing the simulation approach used in our original letter 1 with the device structure considered by Hsu et al First, the increasing behavior of DE at very low V D for / tg2 ¼ 4:3eV (Ref.…”

“…Third, the saturation of the decreasing pattern of DE observed for / tg2 ¼ 4:1eV (Ref. 3) that starts at V D 0:18V comes from the depinning of E e1,UL . As displayed in the inset, we can estimate the point at which this depinning takes place by means of the maximum of second derivative 4 of E e1 ðV D Þ and confirm that it occurs at a value of V D ¼ 0:18V.…”

“…The results herein presented were obtained employing the simulation approach used in our original letter 1 with the device structure considered by Hsu et al First, the increasing behavior of DE at very low V D for / tg2 ¼ 4:3eV (Ref. 3) is due to the tighter control that the drain exerts over the first electron subband in the overlap, E e1,OL compared to that in the underlap, E e1,UL , as seen in Fig. 1 where we plot the derivative of E e1 with respect to V D .…”