Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. <b>106</b>, 026102 (2015)]

In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

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Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Padilla

Palomares

Alper

et al. 2016

Journal of Applied Physics

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Impact of Asymmetric Configurations on the Heterogate Germanium Electron–Hole Bilayer Tunnel FET Including Quantum Confinement

Padilla

Alper

Godoy

et al. 2015

IEEE Trans. Electron Devices

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Abstract-We investigate the effect of asymmetric configurations on the heterogate germanium electron-hole bilayer tunnel FET (TFET) and assess the improvement that they provide in terms of boosting the typically very low ON-current levels of TFET devices in the presence of field-induced quantum confinement. We show that when a very strong inversion for holes is induced at the bottom of the channel, the formation of the inversion layer for electrons is shifted to higher gate voltages, which in turn enhances the electrostatic control of the band bending at the top of the channel. As a result, the pinning of the quantized energy subbands is prevented for a wider range of gate voltages, and this allows vertical band-to-band tunneling distances to be further reduced compared with the conventional symmetric electron-hole bilayer configurations. IndexTerms-Asymmetric layouts, band-to-band tunneling (BTBT), heterogate electron-hole bilayer tunnel FET (HG-EHBTFET), inversion layer, quantum confinement.

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Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)]

Cited by 2 publications

References 4 publications

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Impact of Asymmetric Configurations on the Heterogate Germanium Electron–Hole Bilayer Tunnel FET Including Quantum Confinement

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Response to “Comment on ‘Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor’” [Appl. Phys. Lett. 106, 026102 (2015)]

Cited by 2 publications

References 4 publications

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

Impact of Asymmetric Configurations on the Heterogate Germanium Electron&#x2013;Hole Bilayer Tunnel FET Including Quantum Confinement

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Impact of Asymmetric Configurations on the Heterogate Germanium Electron–Hole Bilayer Tunnel FET Including Quantum Confinement