No abstract

Articles you may be interested inCompressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors Tensile strained Ge tunnel field-effect transistors: k·p material modeling and numerical device simulation Tunnel field-effect transistor using InAs nanowire/Si heterojunction Appl. Phys. Lett. 98, 083114 (2011); 10.1063/1.3558729Boosting the on-current of a n -channel nanowire tunnel field-effect transistor by source material optimization J. Appl. Phys.

No abstract

Here, we present work on epitaxial Ge films grown on a thin buffer layer of C doped Ge (Ge:C). The growth rate of Ge:C is found to slow over time and is thus unsuitable for thick (>20 nm) layers. We demonstrate Ge films from 10 nm to >150 nm are possible by growing pure Ge on a thin Ge:C buffer. It is shown that this stack yields exceedingly low roughness levels (comparable to bulk Si wafers) and contains fewer defects and higher Hall mobility compared to traditional heteroepitaxial Ge. The addition of C at the interface helps reduce strain by its smaller atomic radius and its ability to pin defects within the thin buffer layer that do not thread to the top Ge layer.

No abstract