Collector-assisted operation of micromachined field-emitter triodes

Busta, H.H.; Pogemiller, J.E.; Zimmerman, B.J.

doi:10.1109/16.223716

Cited by 24 publications

(4 citation statements)

References 4 publications

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“…In other words, the space-charge effect is ignored because in a field emission triode amplifier, the device generally operates in saturation region (do not confuse with thermionic triode amplifier that usually operates in spacecharge limited mode), where emitted electrons are mainly extracted by gate (V g ) and the anode (V a ) acted primarily as an electron collector. In addition, the proximity of the gate electrode to the cathode (on the order of a few Am) has effective field shielding from the distant anode (on the order of a few mm) [20]. In this case, the local electric field on the surface of the cathode, E can be expressed as [8,16 -20]:…”

Section: Resultsmentioning

confidence: 99%

Field emission triode amplifier utilizing aligned carbon nanotubes

Wong

Kang

Davidson

et al. 2005

Diamond and Related Materials

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Section: Resultsmentioning

confidence: 99%

Field emission triode amplifier utilizing aligned carbon nanotubes

Wong

Kang

Davidson

et al. 2005

Diamond and Related Materials

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“…We used the field superposition formalism [6] for analysing data. The anode voltage does not have any influence on the field due to the shielding of the gate and focusing electrodes and the large distance of 1 mm of the anode from the tip.…”

Section: Measurementmentioning

confidence: 99%

Micromachined mold-type double-gated metal field emitters

Lee

Kang

Chun

1997

J. Micromech. Microeng.

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Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a diameter extraction gate (or first gate) and a diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

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“…A simple, efficient and accurate FET model is pursued. Some works had been done on modeling the field emission diode [12]- [14] based on the F-N J-E relationship. In their approach, so-called electric field enhancement a and area b factors were used to transform the local J-E relationship to the global -characteristics.…”

Section: Introductionmentioning

confidence: 99%