Micromachined mold-type double-gated metal field emitters

Lee, Yong Jae; Kang, Seokho; Chun, Kukjin

doi:10.1088/0960-1317/7/4/009

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…24 The addition of the second gate to form a vertical triode structure for focusing operation was demonstrated experimentally in 1995. Local and out-of-plane focusing electrodes have been fabricated for most types of FEA, including Si wafer-molded 29 and cusp-molded emitters, 30 Spindt-type emitters, 31 etched Si emitters, 27,25,32 and carbon nanotube ͑CNT͒ emitters. Methods to electrically screen the tip included positioning it below the gate 26 or increasing the extractor gate thickness.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Kirk

Tsujino

Vogel

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inStable, ruggedized, and nanometer-order size transfer mold field emitter array in harsh oxygen radical environment J. Vac. Sci. Technol. B 33, 03C107 (2015); 10.1116/1.4905046 Fabrication of metallic double-gate field emitter arrays and their electron beam collimation characteristics J. Appl. Phys. 112, 093307 (2012); 10.1063/1.4764925 Nanosecond pulsed field emission from single-gate metallic field emitter arrays fabricated by moldinga) J. Vac. Sci. Technol. B 29, 02B117 (2011); 10.1116/1.3569820 Enhancement of ion-induced bending phenomenon using a double-layered film for field emitter array fabrication J. Vac. Sci. Technol. B 28, C2C1 (2010); 10.1116/1.3276096Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator waferThe authors proposed a method to fabricate field emitter arrays with uniform apex diameters in tens of nanometer scale based on the molding technique and apply it to fabricate molybdenum field emitter arrays. Apex diameter equal to 23Ϯ 5 nm was observed in a 6 ϫ 6 tip array by high-resolution scanning electron microscope. They also studied the field-emission characteristics in devices with gate electrodes fabricated on top of the arrays by a self-aligned process. In single-gate devices, emission current of up to 20 A per tip with negligible gate leak current was observed. The gate-fabrication process was extended to fabricate double-gated emitters. Further optimization of the fabrication process for higher emission current, together with metallurgical and lithographic methods, is discussed.

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Section: Introductionmentioning

confidence: 99%

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Kirk

Tsujino

Vogel

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…The wide vacuum gap demands a design of structures capable of focusing. Several focusing structures have been reported: double-gated type, [1][2][3][4][5][6] planar-electrode type 7,8) and self-focus cathode electrode type. 9) In a double-gated type structure, a focus gate electrode (FEG) is stacked on the extraction gate electrode (EGE) with an additional insulating layer, where the additional insulating layer is required to sustain electrical breakdown between EGE and FGE.…”

Section: Introductionmentioning

confidence: 99%

A Field-Emission Display with an Asymmetric Electrostatic-Quadrupole Lens Structure

Lee

et al. 2005

Jpn. J. Appl. Phys.

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An asymmetric electrostatic-quadrupole lens (AEQL) system for high definition field emission displays (HD-FEDs) was proposed. It was applied to the double-gated structure where the emitters are a thick layer of carbon nanotube paste such as a flat surface emitter. The AEQL structure was designed with two opposing planar electrodes of noncircular apertures which generate the quadrupole electric field. Utilizing a design of field emitter arrays (FEAs) with AEQL, an optimized beam shape with horizontal reduction and vertical elongation was obtained. According to three-dimensional (3D) simulation results, this AEQL structure exhibited excellent focusing effects that satisfied the aspects of pixel size and shape in HD-FEDs.

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Focusing field emission arrays constructed by self-aligned photolithography

Zhang

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Enhancement of emission characteristics for field-emitter arrays by optimizing the etched feature of the gate electrode J.In this article, fabrication and characterization data for a focusing Mo field emission array ͑FEA͒ are presented. This FEA is made by a technique of self-aligned photolithography. The final structure is referred to as a double-gate field emission array, with the gates acting as extraction and focusing electrodes. With this technique of self-aligned photolithography, the extraction gate aperture and the focusing gate aperture are both kept absolutely coaxial with their corresponding tips, and the ratio between diameters of the extraction aperture and the focusing aperture is kept controllable. A scanning electron microscope image of the completed microstructure shows the diameter of the extraction aperture to be as small as 1.2 m, and the ratio of the focusing aperture diameter to that of the extraction aperture to be approximately 2:1.

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Micromachined mold-type double-gated metal field emitters

Cited by 3 publications

References 7 publications

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

Fabrication of all-metal field emitter arrays with controlled apex sizes by molding

A Field-Emission Display with an Asymmetric Electrostatic-Quadrupole Lens Structure

Focusing field emission arrays constructed by self-aligned photolithography

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